Substrate processing device and substrate processing method

ABSTRACT

A substrate processing device includes a holding member for holding a substrate, and an opposed member having a body portion and an extended portion extending from at least a part of a peripheral edge part of the body portion. A protrusion is provided on one part of a tip side part of the extended portion and a side surface part of the holding member, and the other part is provided with a restricting structure disposed opposite to the protrusion and restricting relative motion of the protrusion. The relative motion between the holding member and the opposed member is restricted, and the substrate processing device further includes a rotating mechanism, and a nozzle for discharging a processing solution and the protrusion and the restricting structure are disposed below an upper surface of the holding member.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present patent application is a divisional of prior U.S. patentapplication Ser. No. 16/005,057, filed Jun. 11, 2018, by DaichiYOSHITOMI, Kazuki INOUE, Masaki IWAMI and Hiroaki ISHII, entitled“SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD,” which isa continuation of U.S. patent application Ser. No. 15/062,341, filedMar. 7, 2016, now U.S. Pat. No. 10,037,902 B2, issued Jul. 31, 2018,which claims priority to Japanese Patent Application Nos. 2015-066259,filed Mar. 27, 2015, 2015-066266, filed Mar. 27, 2015, 2015-066268,filed Mar. 27, 2015 and 2015-066332, filed Mar. 27, 2015. The contentsof each of the patent applications listed above are incorporated in fullherein by reference.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a substrate processing technology forperforming a processing over a semiconductor wafer, a glass substratefor a liquid crystal display, a glass substrate for a plasma display, asubstrate for an optical disk, a substrate for a magnetic disk, asubstrate for a magneto-optical disk, a glass substrate for a photomask,a substrate for a solar cell or the like (which will simply behereinafter referred to as a “substrate”).

Description of the Background Art

As a substrate processing device for performing such a processing,Japanese Patent Application Laid-Open Nos. 2014-67778 and 2014-67780disclose a device for supplying a processing solution to a substrate andprocessing the substrate while rotating a holding member for holding thesubstrate horizontally from below and a shielding plate opposed to anupper surface of the substrate. The shielding plate is slightly largerthan the substrate and is disposed to cover the substrate in an upperclose position of the substrate. A tip part of a first engaging portionprotruded downward from a peripheral edge part of the shielding plateand a tip part of a second engaging portion protruded upward from aperipheral edge part of the holding member are engaged with each otherin a position between the substrate and the holding member. A rotationaldrive rotates the holding member with the holding member and theshielding plate thus engaged with each other. Consequently, theshielding plate is rotated and driven at an equal rotating speed in thesame rotating direction as the holding member so that refuse or mist isprevented from sticking to the upper surface of the substrate.

Moreover, Japanese Patent Application Laid-Open No. 2010-56218 disclosesa device including a holding member for holding a substrate horizontallyfrom below and a shielding plate opposed to an upper surface of thesubstrate and supplying a processing solution to a to-be-processedsurface of the substrate to process the substrate while rotating theholding member and the shielding plate respectively. The shielding plateis provided in order to shield an atmosphere of a surface of thesubstrate from an external atmosphere thereof. The shielding plate isslightly larger than the substrate and is disposed to cover thesubstrate above the substrate. The shielding plate has an opposedsurface which is opposed to the upper surface of the substrate and aperipheral wall portion. The peripheral wall portion is protrudeddownward from a peripheral edge part of the shielding plate andsurrounds a whole circumference of the peripheral edge part of thesubstrate. A tip edge of the peripheral wall portion is positionedcloser to the holding member than the substrate held by the holdingmember. An inner peripheral surface of the peripheral wall portion takesa shape such as a side surface of a truncated cone which has an opposedsurface to be an upper surface and a diameter thereof is graduallyincreased to approach the tip edge side from the opposed surface side.The processing solution emitted to the substrate is discharged from thesurface of the substrate by the rotation of the substrate and isdischarged from a clearance between a peripheral edge part of an uppersurface of the holding member and a tip edge of the shielding plate.

Furthermore, Japanese Patent Application Laid-Open No. 2011-211094discloses a device including a holding member for horizontally holding asubstrate from below and a disk-shaped nozzle provided between theholding member and the substrate. The disk-shaped nozzle is opposed to acentral part of a lower surface of a substrate W. The device dischargesa processing solution from the disk-shaped nozzle toward a central partof the lower surface of the substrate while rotating the holding member.The discharged processing solution is moved from the central part of thelower surface to a peripheral edge part and is thus discharged from theperipheral edge part to an outside of the substrate in order to coverthe whole lower surface of the substrate by centrifugal force.Consequently, the whole lower surface of the substrate is processed.

In addition, Japanese Patent Application Laid-Open No. 11-102882 (1999)discloses a device including a spin base (a “holding member”) to berotated while holding a substrate substantially horizontally by a chuckpin, a cover member opposed in parallel with a predetermined intervalformed from an upper surface of the substrate, and a nozzle forselectively supplying hydrofluoric acid, pure water or the like to theupper surface of the substrate via a through hole provided on a centralpart of the cover member. Moreover, the device further includes acylindrical processing cup having a bottom face. The spin base isrotatably supported above the bottom face of the processing cup. Thedevice further includes a cylindrical guard. The guard is provided alongan inner peripheral surface of a side wall of the processing cup andsurrounds the spin base. The guard is moved upward and downward betweenpredetermined lower and upper positions by a driving mechanism. Asolution supplied from the nozzle to the substrate in the processing ofthe substrate sticks to a side surface of the spin base in dischargefrom the substrate. Therefore, the device further includes a cleaningnozzle for cleaning the side surface of the spin base. The cleaningnozzle is provided on the bottom face of the processing cup apart fromthe spin base outward in a radial direction. The cleaning nozzledischarges a cleaning liquid obliquely upward toward the side surface ofthe spin base and cleans the side surface of the spin base.

Referring to the devices disclosed in the Japanese Patent ApplicationLaid-Open Nos. 2014-67778 and 2014-67780, however, a connecting part ofthe first and second engaging portions for engaging the shielding platewith the holding member is provided above the holding member. For thisreason, there is a problem in that the processing solution supplied tothe to-be-processed surface of the substrate and discharged from theperipheral edge part of the substrate to the outside by centrifugalforce is splashed back toward the substrate side by a joint of theconnecting part or the like and thus sticks to a surface (“anon-processed surface”) other than the to-be-processed surface of thesubstrate, resulting in generation of a defect such as a particle.

Referring to the device disclosed in the Japanese Patent ApplicationLaid-Open No. 2010-56218, furthermore, there is a small annular spacebetween the inner peripheral surface of the peripheral wall portion andthe peripheral edge part of the substrate in the space surrounded by theshielding plate and the holding member. For this reason, there is aproblem in that the processing solution discharged from the substrateand splashed back by the inner peripheral surface of the peripheral wallportion reaches the non-processed surface of the substrate and sticksthereto, resulting in generation of a defect on the substrate.

Referring to the device disclosed in the Japanese Patent ApplicationLaid-Open No. 2011-211094, moreover, there is a problem in that a partof the processing solution discharged to the lower surface of thesubstrate drops and sticks onto the upper surface of the holding memberfrom the lower surface of the substrate and remains as it is.

In addition, the upper end part of the guard is usually extendedobliquely upward toward a rotating shaft of the spin base. The substrateprocessing device disclosed in the Japanese Patent Application Laid-OpenNo. 11-102882 (1999) supplies the solution from the nozzle to thesubstrate with the guard disposed in an upper position. The suppliedsolution scatters in the discharge from the substrate and also sticks tothe inner peripheral surface of the guard. When the processing isrepeated in a state in which the sticking solution remains, a depositobtained by drying and solidifying the solution is gradually accumulatedon the guard. When such a deposit is peeled, a particle is caused. Sincethe upper end part of the guard is close to the substrate, the depositsticking to the upper end part tends to cause the particle.

Referring to the device disclosed in the Japanese Patent ApplicationLaid-Open No. 11-102882 (1999), however, there is a problem in that theinner peripheral surface of the guard cannot be cleaned by the cleaningnozzle for cleaning the side surface of the spin base. Furthermore,there is a problem in that a structure of the device is complicated anda manufacturing cost is thus increased if a dedicated cleaning nozzlefor discharging the cleaning liquid toward the inner peripheral surfaceof the guard is further provided, for example. In order to effectivelysuppress the particle, moreover, it is effective to clean the solutionsticking to the inner peripheral surface of the upper end part of theguard. However, there is a problem in that the cleaning liquid scattersfrom the upper end part of the guard toward the substrate side and thussticks to the substrate when the cleaning nozzle discharges the cleaningliquid from below toward the inner peripheral surface of the upper endpart in the state in which the spin base holds the substrate. Inaddition, there is also a problem in that the guard needs to be cleanedafter the substrate is retreated from the spin base if the sticking ofthe cleaning liquid is to be avoided.

SUMMARY OF THE INVENTION

The present invention is directed to a substrate processing device.

A substrate processing device according to an aspect of the presentinvention includes: a holding member having an upper surface opposed toa lower surface of a substrate with a clearance to hold the substratesubstantially horizontally from below, being rotatable around apredetermined rotation axis; and an opposed member having a body portionopposed, with a clearance, to an upper surface of the substrate held bythe holding member and an extended portion extending from at least apart of a peripheral edge part of the body portion to a side of theholding member, being rotatable around the rotation axis, wherein aprotrusion is provided in one part of a tip side part of the extendedportion and a side surface part of the holding member, and the otherpart is provided with a restricting structure disposed opposite to theprotrusion from ahead of and behind the protrusion in a circumferentialdirection around the rotation axis, said restricting structurerestricting relative motion of said protruded portion in thecircumferential direction, and the holding member and the opposed membermutually restrict relative motion therebetween in the circumferentialdirection around the rotation axis through the protrusion and therestricting structure, and the substrate processing device furtherincludes: a rotating mechanism rotating at least one of the holdingmember and the opposed member around the rotation axis; and a nozzledischarging a processing solution to a to-be-processed surface of thesubstrate which is held by the holding member and is being rotated,wherein the protrusion and the restricting structure are disposed belowan upper surface of the holding member.

In the device, the extended portion extends from the peripheral edgepart of the body portion of the opposed member to the side of theholding member. The protrusion is provided in one part of the tip sidepart of the extended portion and the side surface part of the holdingmember, and furthermore, the restricting structure is provided in theother part and the protrusion and the restricting structure are disposedbelow the upper surface of the holding member. Accordingly, theprocessing solution discharged from the substrate can be prevented frombeing splashed back by the protrusion or the restricting structure,thereby sticking to the non-processed surface of the substrate.

A substrate processing device according to another aspect of the presentinvention includes: a holding member having an upper surface opposed toa lower surface of a substrate with a clearance to hold the substratesubstantially horizontally from below, being rotatable around apredetermined rotation axis; an opposed member having a body portionopposed, with a clearance, to an upper surface of the substrate held bythe holding member and a cylindrical extended portion which extends froma peripheral edge part of the body portion to the holding member side tosurround an end face of the substrate being rotatable around therotation axis; a rotating mechanism rotating the holding member and theopposed member together in a same direction around the rotation axis;and a nozzle discharging a processing solution to a to-be-processedsurface of any one of an upper surface and a lower surface of thesubstrate which is held by the holding member and is being rotated,wherein the opposed member includes an annular recess formed in aportion of an inside surface of said opposed member surrounding theupper surface and the end face of said substrate, the portion of theinside surface being disposed between a tip side part of the extendedportion and an opposed surface of the inside surface opposed to thesubstrate, and the annular recess is recessed upward relative to aperipheral edge part of the opposed surface.

In the device, the opposed member includes the annular recess which isrecessed upward from the peripheral edge part of the opposed portion ina portion between the tip side part of the extended portion and theopposed surface of said inside surface opposed to the substrate in theinside surface surrounding the upper surface and the end face of thesubstrate. Consequently, an annular bulged space which is bulged upwardfrom the opposed part is formed on the outside of the peripheral edgepart of the substrate. Therefore, the processing solution dischargedfrom the substrate and then splashed back from the inner peripheralsurface of the extended portion can be prevented from sticking to thenon-processed surface of the substrate.

A substrate processing device according to further another aspect of thepresent invention includes: a holding member having an upper surfaceopposed to a lower surface of a substrate with a clearance to hold thesubstrate substantially horizontally from below, being rotatable arounda predetermined rotation axis, and including a disk-shaped base defininga central axis coincident with the rotation axis and a flange portionprotruding outward from a peripheral wall portion of the base in aradial direction; a rotational drive rotating the holding member aroundthe rotation axis; a guard having a cylindrical shape including an upperend side part that extends obliquely upward toward the rotation axis, tosurround a periphery of the holding member, being movable upward anddownward; a processing solution discharging portion capable ofdischarging a processing solution to a to-be-processed surface of thesubstrate; a cleaning liquid discharging portion capable of discharginga cleaning liquid to the flange portion from below the flange portion ofthe holding member; an elevation drive capable of moving the guardupward and downward between an upper position where the guard canreceive the processing solution supplied from the processing solutiondischarging portion to the substrate and then discharged from thesubstrate and a lower position where an upper end of the guard is placedon a side of the flange portion; and a controller controlling theelevation drive, the processing solution discharging portion and thecleaning liquid discharging portion, wherein while making the elevationdrive dispose the guard in the upper position, the controller makes theprocessing solution discharging portion discharge the processingsolution toward the to-be-processed surface of the substrate to processthe substrate, and then while making the elevation drive dispose theguard in the lower position, the controller makes the cleaning liquiddischarging portion discharge the cleaning liquid toward the flangeportion of the holding member which holds the substrate while rotating.

In the device, the processing solution discharging portion dischargesthe processing solution toward the to-be-processed surface of thesubstrate while the guard is disposed in the upper position where guardcan receive the processing solution discharged from the substrate. Whilethe guard is disposed in the lower position where the upper end of theguard is placed on the side of the flange portion of the holding member,then, the cleaning liquid discharging portion discharges the cleaningliquid toward the flange portion of the holding member which holds thesubstrate while rotating. The discharged cleaning liquid is dischargedoutward in the radial direction of the holding member from the lowersurface of the flange portion. The upper end of the guard disposed inthe lower position is positioned on the side of the flange portion.Therefore, the discharged processing solution hits the inner peripheralsurface of the upper end part of the guard. In the state in which thesubstrate is held by the holding member, consequently, both the guardand the holding member which have the processing solution stickingthereto can be cleaned by the common cleaning liquid dischargingportion.

Therefore, it is an object of the present invention to provide atechnology capable of preventing a processing solution supplied to asubstrate and discharged from the substrate to an outside from stickingto a non-processed surface of the substrate. Moreover, it is anotherobject of the present invention to provide a technology capable ofpreventing a processing solution supplied to a lower surface of asubstrate which is held by a holding member and is being rotated fromdropping and sticking onto the holding member and remaining as it is.Furthermore, it is further another object of the present invention toprovide a technology capable of cleaning both a guard and a holdingmember by a common cleaning liquid discharging portion in a state inwhich the holding member holds a substrate.

In the present invention, the term “to-be-processed surface” means asurface that is subject to be processed (“a surface to be processed”).In the event that the processing with a processing solution is to beperformed on a major surface, the major surface represents“to-be-processed surface” of the invention.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view for explaining a structure of a substrateprocessing device according to a first preferred embodiment of thepresent invention;

FIG. 2 is a perspective view showing a shielding plate and a spin basein FIG. 1 which are disposed in a processing position;

FIG. 3 is a perspective view showing the spin base in FIG. 2 ;

FIG. 4 is a perspective view showing the shielding plate in FIG. 2 ;

FIG. 5 is a perspective view showing the spin base in FIG. 2 ;

FIG. 6 is a longitudinal sectional view showing peripheral edge parts ofthe shielding plate and the spin base in FIG. 2 ;

FIG. 7 is another longitudinal sectional view showing the peripheraledge parts of the shielding plate and the spin base in FIG. 2 ;

FIG. 8 is a cross sectional view showing a restricting portion in FIG. 6;

FIG. 9 is a sectional view showing a state in which the restrictingportion in FIG. 8 is covered with an elastic member;

FIG. 10 is a perspective view showing another example of the structuresof the shielding plate and the spin base according to the firstpreferred embodiment of the present invention;

FIG. 11 is a perspective view showing a state in which the shieldingplate in FIG. 10 is disposed in a processing position;

FIG. 12 is a longitudinal sectional view showing another example of thestructures of the shielding plate and the spin base according to thefirst preferred embodiment of the present invention;

FIG. 13 is a longitudinal sectional view showing other sections of theshielding plate and the spin base in FIG. 12 ;

FIG. 14 is a cross sectional view showing another example of thestructure of the restricting portion according to the first preferredembodiment of the present invention;

FIG. 15 is a cross sectional view showing another state of therestricting portion in FIG. 14 ;

FIG. 16 is a cross sectional view showing another state of therestricting portion in FIG. 14 ;

FIG. 17 is a cross sectional view showing another state of therestricting portion in FIG. 14 ;

FIG. 18 is a sectional view showing another example of the structure ofthe restricting portion according to the first preferred embodiment ofthe present invention;

FIG. 19 is a sectional view showing another example of the structure ofthe restricting portion according to the first preferred embodiment ofthe present invention;

FIG. 20 is a schematic view for explaining a structure of a substrateprocessing device according to a second preferred embodiment of thepresent invention;

FIG. 21 is a schematic view for explaining a structure of a nozzle inFIG. 20 ;

FIG. 22 is a flowchart showing an example of an operation of thesubstrate processing device according to the second preferred embodimentof the present invention;

FIG. 23 is a schematic view for explaining a structure of a substrateprocessing device according to a third preferred embodiment of thepresent invention;

FIG. 24 is a flowchart showing an example of an operation of thesubstrate processing device according to the third preferred embodimentof the present invention;

FIG. 25 is a view for explaining the operation shown in the flowchart ofFIG. 24 ; and

FIG. 26 is a view for explaining an operation of a part of the flowchartin FIG. 24 .

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments will be described below with reference to thedrawings. The following preferred embodiments are examples forconcreteness of the present invention and are not the cases thatrestrict the technical range of the present invention. In each of thefigures to be referred to, moreover, dimensions and numbers ofrespective portions are shown with exaggeration or simplification insome cases for easy understanding. A vertical direction is aperpendicular direction and a substrate side with respect to a spin baseis an upper part.

1. Referring to First Preferred Embodiment

<1-1. Structure of Substrate Processing Device 1>

A structure of a substrate processing device 1 will be described withreference to FIGS. 1 to 5 . FIG. 1 is a schematic view for explainingthe structure of the substrate processing device 1. In FIG. 1 , there isshown a state in which a shielding plate 90 is disposed in a retreatposition. Moreover, the shielding plate 90 disposed in a processingposition is shown in a virtual line. FIG. 2 is a schematic perspectiveview showing the shielding plate 90 and a spin base 21 which are rotatedaround a rotation axis a1 in a state in which the shielding plate 90 isdisposed in the processing position. FIG. 3 is a schematic perspectiveview showing the spin base 21 to be rotated around the rotation axis a1with a substrate 9 held as seen obliquely from above. Description of theshielding plate 90 is omitted. A surface of the substrate 9 takes ansubstantially circular shape. The substrate 9 is delivered into/out ofthe substrate processing device 1 by means of a robot or the like in thestate in which the shielding plate 90 is disposed in the retreatposition. The substrate 9 delivered into the substrate processing device1 is held removably by the spin base 21. FIG. 4 is a schematicperspective view showing the shielding plate 90 as seen obliquely frombelow. FIG. 5 is a schematic perspective view showing the spin base 21as seen obliquely from above.

Note that in the following description, a “processing solution” includesa “chemical solution” to be used in a chemical solution treatment and a“rinse liquid (which is also referred to as a “cleaning liquid”)” to beused for a rinse processing for rinsing the chemical solution.

The substrate processing device 1 includes a spin chuck 2, a scatterpreventing portion 3, a surface protecting portion 4, a processingportion 5 and a controller 130. These portions 2 to 5 are electricallyconnected to the controller 130 and are operated in response to aninstruction given from the controller 130. As the controller 130, forexample, it is possible to employ the same portion as a generalcomputer. In other words, the controller 130 includes, for example, aCPU for performing various pieces of calculation processing, an ROM tobe a read only memory for storing a basic program, an RAM to be areadable/writable memory for storing various information, and a magneticdisk for storing control software, data, and the like. In the controller130, the CPU to be a main controller performs a calculation processingin accordance with a procedure described in a program, therebycontrolling each portion of the substrate processing device 1.

<Spin Chuck 2>

The spin chuck 2 is a substrate holding portion for holding thesubstrate 9 in an substantially horizontal posture with one of majorsurfaces thereof turned upward, and rotates the substrate 9 around theperpendicular rotation axis a1 passing through a center c1 of the majorsurface.

The spin chuck 2 includes a spin base (a “holding member”) 21 to be adisk-shaped member which is slightly larger than the substrate 9. Thespin base 21 has a cylindrical through hole 21 a opened on centers ofupper and lower surfaces thereof, respectively. The through hole 21 a isformed in such a manner that a central axis thereof is coincident withthe rotation axis a1. A cylindrical rotating shaft portion 22 is coupledto the opening on the lower side of the through hole 21 a. Consequently,the through hole 21 a and a hollow part of the rotating shaft portion 22communicate with each other. The rotating shaft portion 22 is disposedin such a posture that an axis thereof is set along the perpendiculardirection. Moreover, a rotational drive (for example, a motor) 23 isconnected to the rotating shaft portion 22. The rotational drive 23rotatively drives the rotating shaft portion 22 around the axis thereof.The axis of the rotating shaft portion 22 is coincident with therotation axis a1. Accordingly, the spin base 21 can be rotated aroundthe rotation axis a1 together with the rotating shaft portion 22. Therotating shaft portion 22 and the rotational drive 23 are housed in acylindrical casing 24.

Moreover, a plurality of (for example, six) chuck pins 25 is provided ata proper interval in the vicinity of a peripheral edge part of the uppersurface of the spin base 21. Each of the chuck pins 25 is attached tothe spin base 21 through a plurality of openings 21 b provided on theupper surface of the spin base 21. The chuck pin 25 abuts on an end faceof the substrate 9 to perform positioning for the substrate 9 in ahorizontal direction, and furthermore, holds the substrate 9 in ansubstantially horizontal posture in a slightly higher position than theupper surface of the spin base 21 (that is, at a determined intervalfrom the upper surface of the spin base 21). In other words, the spinbase 21 holds the substrate 9 substantially horizontally from belowthrough the chuck pin 25. The upper surface of the spin base 21 isopposed in substantially parallel from the lower surface of thesubstrate 9 with a clearance, for example. Two protrusions 26 areprovided on cylindrical side surface parts of the spin base 21 at aregular interval in a circumferential direction. It is sufficient thatat least one protrusion 26 is provided, and a large number ofprotrusions 26 may be provided.

With this structure, when the rotational drive 23 rotates the rotatingshaft portion 22 in a state in which the spin base 21 holds thesubstrate 9 by the chuck pin 25 thereabove, the spin base 21 is rotatedaround an axial center in the perpendicular direction. Consequently, thesubstrate 9 held by the spin base 21 is rotated around the perpendicularrotation axis a1 passing through the center c1 in a plane thereof. Thesurface protecting portion 4 which will be described below is providedwith the shielding plate 90 so as to be rotatable in the circumferentialdirection around the rotation axis a1. Relative positions of the spinbase 21 and the shielding plate 90 in the circumferential direction canbe restricted. When the rotational drive 23 rotates the rotating shaftportion 22 in a state in which the relative position is restricted, thespin base 21, the substrate 9 and the shielding plate 90 are rotated inthe same rotating direction at an equal rotating speed. The rotationaldrive 23, the protrusion 26 and a restricting structure 94 constitute arotating mechanism 231 for rotating the spin base 21 and the shieldingplate 90 together in the same direction around the rotation axis a1.

Note that another rotational drive for rotating the shielding plate 90around the rotation axis a1 with the relative position restricted may beprovided in place of the rotational drive 23. In this case, anotherrotational drive serves as one of components of the rotating mechanism231 in place of the rotational drive 23. Moreover, both the rotationaldrive 23 and another rotational drive may be provided. In other words,the rotating mechanism 231 rotates at least one of the spin base 21 andthe shielding plate 90 around the rotation axis a1 in the state in whichthe relative positions of the spin base 21 and the shielding plate 90 inthe circumferential direction are restricted. If the rotating mechanism231 rotates the spin base 21 and the shielding plate 90 in the samedirection at the same speed, an air flow turning toward the center c1side of the substrate 9 can be prevented from being generated betweenthe upper surface of the substrate 9 and the lower surface of theshielding plate 90. Consequently, it is possible to prevent a droplet ofa processing solution from being sucked into the upper surface of thesubstrate 9.

In the case in which both the rotational drive 23 and another rotationaldrive are provided, the restricting structure 94 and the protrusion 26may not be provided. In this case, furthermore, a speed for rotating thespin base 21 by the rotational drive 23 may be different from a speedfor rotating the shielding plate 90 in the same direction as the spinbase 21 by another rotational drive. In the case in which both therotational drive 23 and another rotating mechanism are provided,moreover, a tip of an extended portion 92 may be positioned on aslightly upper side from the upper surface of the spin base 21.

The chuck pin 25 and the rotational drive 23 are electrically connectedto the controller 130 and are operated under control of the controller130. In other words, a timing for holding the substrate 9 on the spinbase 21, a timing for releasing the held substrate 9 and a rotating modeof the spin base 21 (specifically, a rotating start timing, a rotatingend timing, the number of rotations (that is, a rotating speed) or thelike) are controlled by the controller 130.

<Scatter Preventing Portion 3>

The scatter preventing portion 3 catches a processing solution scatteredfrom the substrate 9 rotated together with the spin base 21 or the like.

The scatter preventing portion 3 includes a splash guard 31. The splashguard 31 is a cylindrical member having an upper end opened and isprovided to surround the spin chuck 2. In the present preferredembodiment, the splash guard 31 includes three members of a bottommember 311, an inner member (which will also simply be referred to as an“inside guard” or a “guard”) 312, and an outer member (which will alsobe referred to as an “outside guard”) 313, for example. The outer member313 may not be provided. On the contrary, a guard may further beprovided on the outside of the outer member 313 so as to surround thespin chuck 2.

The bottom member 311 is a cylindrical member having an upper end openedand includes an annular bottom portion, a cylindrical inside wallportion extended upward from an inside edge part of the bottom portion,and a cylindrical outside wall portion extended upward from an outsideedge part of the bottom portion. At least the vicinity of a tip of theinside wall portion is housed in an inside space of a flange-shapedmember 241 provided in a casing 24 of the spin chuck 2.

A solution discharging groove (not shown) communicating with a spacebetween the inside wall portion and the outside wall portion is formedon the bottom portion. The solution discharging groove is connected to asolution discharging line in a factory. Moreover, an air/solutiondischarging mechanism for forcibly discharging air from an inner part ofthe groove and bringing the space between the inside wall portion andthe outside wall portion into a negative pressure state is connected tothe solution discharging groove. The space between the inside wallportion and the outside wall portion is a space for collecting aprocessing solution used for processing the substrate 9 and dischargingthe solution, and the processing solution collected into the space isdischarged from the solution discharging groove.

The inner member 312 is a cylindrical member having an upper end openedand an upper part (an “upper end side part” or an “upper end part”) ofthe inner member 312 is extended inward and upward. In other words, theupper part is extended obliquely upward toward the rotation axis a1. Acylindrical inner peripheral wall portion extended downward along aninner peripheral surface of the upper part and a cylindrical outerperipheral wall portion extended downward along an outer peripheralsurface of the upper part are formed in a lower part of the inner member312. In a state in which the bottom member 311 and the inner member 312are close to each other (a state shown in FIG. 1 ), the outside wallportion of the bottom member 311 is housed between the inner peripheralwall portion and the outer peripheral wall portion of the inner member312. A processing solution or the like received by the upper part of theinner member 312 is discharged through the bottom member 311.

The outer member 313 is a cylindrical member having an upper end openedand is provided on the outside of the inner member 312. An upper part(an “upper end side part” or an “upper end part”) of the outer member313 is extended inward and upward. In other words, the upper part isextended obliquely upward toward the rotation axis a1. The lower part isextended downward along the outer peripheral wall portion of the innermember 312. A processing solution or the like received by the upper partof the outer member 313 is discharged from a clearance between the outerperipheral wall portion of the inner member 312 and the lower part ofthe outer member 313.

The splash guard 31 is provided with a guard driving mechanism (an“elevation drive”) 32 for moving the splash guard 31 upward anddownward. The guard driving mechanism 32 includes a stepping motor, forexample. In the present preferred embodiment, the guard drivingmechanism 32 independently moves the three members 311, 312 and 313provided in the splash guard 31 upward and downward.

Each of the inner member 312 and the outer member 313 is moved betweenan upper position and a lower position thereof upon receipt of drivingof the guard driving mechanism 32. Here, the upper positions of therespective members 312 and 313 are positions in which upper edge partsof the members 312 and 313 are disposed on the side of the substrate 9held by the spin base 21 and thereabove. On the other hand, the lowerpositions of the respective members 312 and 313 are positions in whichthe upper edge parts of the members 312 and 313 are disposed below theupper surface of the spin base 21. The upper position (the lowerposition) of the outer member 313 is placed slightly above the upperposition (the lower position) of the inner member 312. The inner member312 and the outer member 313 are simultaneously or sequentially movedupward and downward so as not to collide with each other. The bottommember 311 is driven by the guard driving mechanism 32 between aposition in which the inside wall portion thereof is housed in theinside space of the flange-shaped member 241 provided on the casing 24and a position placed therebelow. However, the guard driving mechanism32 is electrically connected to the controller 130 and is operated undercontrol of the controller 130. In other words, the position of thesplash guard 31 (specifically, the position of each of the bottom member311, the inner member 312 and the outer member 313) is controlled by thecontroller 130.

<Surface Protecting Portion 4>

The surface protecting portion 4 supplies a gas (a cover gas) to thevicinity of the center of the upper surface of the substrate 9 held bythe spin base 21, thereby protecting the upper surface of the substrate9 from an atmosphere of a processing solution supplied to the lowersurface or the like.

The surface protecting portion 4 includes a cylindrical cover gas nozzle41 for discharging a gas toward the vicinity of the center of the uppersurface of the substrate 9 held by the spin base 21. The cover gasnozzle 41 is attached to a portion close to a tip of an arm 42 extendedhorizontally and penetrates the arm 42 in a perpendicular direction. Acentral axis of the cover gas nozzle 41 is coincident with the rotationaxis a1. A lower end part of the cover gas nozzle 41 is extended furtherdownward from a lower end face of the arm 42. A disk-shaped rotatingportion 93 is attached to the lower end part of the cover gas nozzle 41through a bearing. A central axis of the rotating portion 93 iscoincident with the rotation axis a1. Consequently, the rotating portion93 can be rotated in a circumferential direction around the cover gasnozzle 41 around the rotation axis a1.

The disk-shaped shielding plate (an “opposed member”) 90 is attached toa lower part of the rotating portion 93 so as to be rotatable togetherwith the rotating portion 93. The upper surface of the shielding plate90 is provided substantially horizontally and a shape thereof is acircular shape which is slightly larger than the spin base 21, and therotation axis a1 passes through a center thereof. Consequently, theshielding plate 90 is rotatable in the circumferential direction aroundthe rotation axis a1. The shielding plate 90 includes a disk-shaped bodyportion 91 with the rotation axis a1 set to be a central axis and theextended portion 92 provided in a peripheral edge part of the bodyportion 91. A through hole 91 a communicating with the cover gas nozzle41 is provided on a central part of the body portion 91. The extendedportion 92 is a cylindrical wall portion (an annular wall portion)extended downward from the peripheral edge part of the body portion 91and is provided in a circumferential direction of the peripheral edgepart. The extended portion 92 is a cylindrical member extending from theperipheral edge part of the body portion 91 toward the spin base 21 sideand surrounding the end face of the substrate 9. The extended portion 92crosses a plane including the substrate 9 at the outside of the end faceof the substrate 9 and is thus protruded from the substrate 9 toward thespin base 21 side.

A base end of the arm 42 is coupled to a nozzle base 43. The nozzle base43 is disposed in such a posture as to set an axis thereof along aperpendicular direction and is configured to be extendable in theperpendicular direction. A base end of the arm 42 is coupled to an upperend of the nozzle base 43. The nozzle base 43 is provided with a drivingportion (a “moving portion”) 44 for expanding/contracting the nozzlebase 43 along the axis thereof. The driving portion 44 includes astepping motor and the like, for example.

The driving portion 44 expands/contracts the nozzle base 43, therebymoving the shielding plate 90 relatively with respect to the spin base21 in a direction of the rotation axis a1 between a processing position(a “first position”) and a retreat position (a “second position”) abovethe processing position. The processing position of the shielding plate90 is a position placed above the substrate 9 held by the spin base 21and is a position in which the lower surface of the shielding plate 90is opposed to the upper surface of the substrate 9, and at the sametime, approaches the upper surface in a non-contact state. The retreatposition of the shielding plate 90 is a position in which the shieldingplate 90 does not interfere with a delivery path of the substrate 9 and,for example, a position placed above the upper edge part of the splashguard 31. When the shielding plate 90 is disposed in the processingposition, the body portion 91 is opposed to the upper surface of thesubstrate 9 held by the spin base 21 with a clearance formedtherebetween, for example, substantially in parallel. The drivingportion 44 is electrically connected to the controller 130 and isoperated under the control of the controller 130. In other words, theposition of the shielding plate 90 is controlled by the controller 130.

Two restricting structures 94 are provided in the tip side part of theextended portion 92. A recess opened from the tip surface of theextended portion 92 to the inner peripheral surface of the extendedportion 92 is employed as the restricting structure 94 as shown in FIG.4 , for example. At least a part of the protrusion 26 is housed in therecess.

Respective initial positions (initial rotating angles) incircumferential direction are preset to the spin base 21 and theshielding plate 90. When the shielding plate 90 is disposed in theretreat position placed above the processing position, the spin base 21and the shielding plate 90 are disposed in the respective initialpositions in the circumferential direction. The two restrictingstructures 94 are provided in the tip side parts of the extended portion92 respectively in such a manner that two protrusions 26 provided on theside surface part of the spin base 21 overlap with each other as seenthrough from above the shielding plate 90 in this state.

In a state in which the shielding plate 90 is disposed in the processingposition as shown in FIG. 6 , at least a part of the protrusion 26 ishoused in the restricting structure 94. In this case, the restrictingstructure 94 is disposed opposite to the protrusion 26 from ahead of andbehind the protrusion 26 in the circumferential direction around therotation axis a1 to restrict relative motion in the circumferentialdirection of the protrusion 26. In the state in which the shieldingplate 90 is disposed in the processing position, moreover, the extendedportion 92 extends from the peripheral edge part of the body portion 91toward the side of the spin base 21. Then, the restricting structure 94is disposed below the upper surface of the spin base 21. In other words,both the protrusion 26 and the restricting structure 94 are disposedbelow the upper surface of the spin base 21. The spin base 21 and theshielding plate 90 mutually restrict the relative motion therebetween inthe circumferential direction around the rotation axis a1 through theprotrusion 26 and the restricting structure 94. In other words, therestricting structure 94 and the protrusion 26 form a restrictingportion 201 for restricting the relative motion in the circumferentialdirection between the spin base 21 and the shielding plate 90. In otherwords, the restricting portion 201 restricts a relative position of theshielding plate 90 with respect to the spin base 21 in thecircumferential direction around the rotation axis a1.

When the shielding plate 90 is disposed in the retreat position,respective rotational positions of the restricting structure 94 and theprotrusion 26 in the circumferential direction around the rotation axisa1 are aligned with each other. The restricting structure 94 is disposedto keep away from a relative movement path of the protrusion 26 withrespect to the restricting structure 94 in a moving process of theshielding plate 90 from the retreat position to the processing position.Consequently, it is possible to avoid a collision of the restrictingstructure 94 and the protrusion 26 in the moving process. When theshielding plate 90 is disposed in the processing position, therestricting structure 94 is disposed opposite to the protrusion 26 fromahead of and behind the protrusion 26 in the circumferential directionaround the rotation axis a1. In more detail, when the spin base 21 isstopped immediately after the restricting structure 94 is disposed inthe processing position, the restricting structure 94 is placed oppositeto the protrusion 26 without coming in contact with the protrusion 26from ahead of and behind the protrusion 26 in the circumferentialdirection. Consequently, the relative position of the shielding plate 90with respect to the spin base 21 is restricted in the circumferentialdirection. When the shielding plate 90 is disposed in the retreatposition, moreover, the restricting structure 94 is placed relativelyapart from the protrusion 26 in the direction of the rotation axis a1.

In a state in which the shielding plate 90 is disposed in the processingposition and the relative position in the circumferential direction ofthe shielding plate 90 with respect to the spin base 21 is restricted bythe restricting portion 201, when the rotational drive 23 rotates therotating shaft portion 22, the spin base 21 is rotated together with thesubstrate 9. Consequently, the protrusion 26 abuts on a portion of therestricting structure 94 at a downstream side in the rotating directionwith respect to the protrusion 26. Then, the shielding plate 90 isdriven and rotated at an equal rotating speed in the same rotatingdirection as the spin base 21.

Here, there will be considered the case in which an emergency stopoperation is performed during a processing while the substrateprocessing device 1 rotates the substrate, for example. For example, inthis case, it is assumed that the substrate processing device 1 movesthe shielding plate 90 to the retreat position. Also in the case inwhich the shielding plate 90 and the spin base 21 are not placed in theinitial positions (the initial rotating angles), thus, it is necessaryto automatically restart the processing.

The spin base 21 is driven by the rotational drive 23 and can be thusrotated, while the shielding plate 90 is driven and rotated by therotation of the spin base 21. For this reason, the following operationis required. The controller 130 controls the driving portion 44 to movethe shielding plate 90 in a vertical direction in such a manner that theshielding plate 90 slightly comes in contact with the spin base 21, forexample. Thereafter, the controller 130 controls the rotational drive 23to rotate the spin base 21 at a low speed, thereby rotating theshielding plate 90 in the circumferential direction around the rotationaxis a1.

The shielding plate 90 includes a sensor capable of detecting theinitial position of the shielding plate 90 in the circumferentialdirection. The controller 130 controls the rotational drive 23 to stopthe rotation of the shielding plate 90 when the shielding plate 90reaches the initial position based on an output of the sensor.

Then, the controller 130 controls the driving portion 44 to move theshielding plate 90 to the retreat position thereabove, and furthermore,controls the rotational drive 23 to rotate the spin base 21 in theinitial position in the circumferential direction. In the state in whichthe shielding plate 90 is disposed in the retreat position,consequently, the shielding plate 90 and the spin base 21 are disposedin the initial positions in the circumferential direction. It ispreferable that the shielding plate 90 not be shifted from the initialposition in the circumferential direction when the shielding plate 90 ismoved relatively with respect to the spin base 21 between the retreatposition and the processing position. For this reason, the surfaceprotecting portion 4 preferably includes a lock mechanism for fixing thepositions in the circumferential direction of the rotating portion 93and the shielding plate 90 with respect to the arm 42 in the state inwhich the shielding plate 90 is disposed in the initial position in thecircumferential direction. When the shielding plate 90 is disposed inthe processing position, the lock mechanism is released.

Although the restricting structure 94 is provided on the tip side part(the lower end side part) of the extended portion 92 and the protrusion26 is provided on the side surface part of the spin base 21 in theexamples of FIGS. 4 and 5 , the restricting structure 94 may be providedon the side surface portion of the spin base 21 and the protrusion 26may be provided on the tip side part of the extended portion 92. Inother words, the protrusion 26 is provided in one part of the tip sidepart of the extended portion 92 of the shielding plate 90 and the sidesurface part of the spin base 21, and furthermore, the restrictingstructure 94 is provided in the other part.

A pair of protrusions disposed opposite to the protrusion 26 from aheadof and behind the protrusion 26 in the circumferential direction aroundthe rotation axis a1 may be employed as the restricting structure 94 inplace of the recess, for example. Also in this case, the relative motionin the circumferential direction of the protrusion 26 can be restrictedby the restricting structure. Therefore, usefulness of the presentinvention is not damaged. In the case in which the recess capable ofhousing at least a part of the protrusion 26 is employed as therestricting structure as shown in FIG. 4 , an interval between the spinbase 21 and the extended portion 92 of the shielding plate 90 can bereduced more greatly. For this reason, a diameter of the shielding plate90 can be reduced more greatly.

Although the extended portion 92 shown in FIG. 4 is a cylindricalmember, moreover, it is also possible to use, as the extended portion, aplurality of wall portions or column portions distributed and disposedin the circumferential direction in the peripheral edge part of the bodyportion 91 and extended downward from the peripheral edge part. Theextended portion extends from at least a part of the peripheral edgepart of the body portion 91 toward the side of the spin base 21. If theextended portion is the cylindrical member, it does not cross the flowof the processing solution supplied to the substrate 9 and dischargedfrom the substrate 9 to the outside. For this reason, it is possible tolessen the processing solution splashed back from the extended portiontoward the substrate 9 side.

A cover gas supplying portion 45 to be a piping system for supplying agas (here, a nitrogen (N₂) gas, for example) to the cover gas nozzle 41is connected thereto. Specifically, the cover gas supplying portion 45includes a structure in which a nitrogen gas supply source 451 to be asupply source for supplying the nitrogen gas is connected to the covergas nozzle 41 through a pipe 452 having a switching valve 453 insertedtherebetween, for example. With this structure, when the switching valve453 is opened, the nitrogen gas supplied from the nitrogen gas supplysource 451 is discharged from the through hole 91 a provided on thecentral part of the shielding plate 90 via the cover gas nozzle 41. Notethat the gas supplied to the cover gas nozzle 41 may be a gas other thanthe nitrogen gas (for example, various inert gases, dry air and the likeother than the nitrogen gas).

When the gas is supplied from the cover gas supplying portion 45 to thecover gas nozzle 41 in the state in which the shielding plate 90 isdisposed in the processing position, the gas (cover gas) is dischargedfrom the cover gas nozzle 41 to the upper surface of the substrate 9toward the vicinity of the center of the upper surface of the substrate9 held by the spin base 21. However, the switching valve 453 of thecover gas supplying portion 45 is electrically connected to thecontroller 130 and is opened/closed under the control of the controller130. In other words, a discharging mode of the gas from the cover gasnozzle 41 (specifically, a discharging start timing, a discharging endtiming, a discharging flow rate or the like) is controlled by thecontroller 130.

<Processing Portion 5>

The processing portion 5 performs a processing for a to-be-processedsurface (a lower surface in the example of FIG. 1 ) of the substrate 9held by the spin base 21. Specifically, the processing portion 5supplies a processing solution to the to-be-processed surface of thesubstrate 9 held by the spin base 21.

As shown in FIG. 1 , the processing portion 5 includes a supply pipe 81disposed in penetration through the hollow part of the rotating shaftportion 22 of the spin chuck 2, for example. A tip of the supply pipe 81is connected to the opening on the lower side of the through hole 21 ain such a manner that the supply pipe 81 and the through hole 21 a ofthe spin base 21 communicate with each other. A nozzle 50 is connectedto the opening on the upper side (the substrate 9 side) of the throughhole 21 a. The nozzle 50 includes a discharging port facing the lowersurface of the substrate 9 which is held by the spin base 21 and isbeing rotated. The nozzle 50 discharges the processing solution suppliedvia the supply pipe 81 from the discharging port to the lower surface ofthe substrate 9. Note that it is also possible to employ a nozzlecapable of supplying the processing solution to the upper surface (awhole part or a peripheral edge part) of the substrate 9 which is theto-be-processed surface. Such a nozzle is provided on the shieldingplate 90, for example. In other words, the substrate processing device 1includes a nozzle capable of discharging the processing solution to theto-be-processed surface of any one of the upper and lower surfaces ofthe substrate 9 which is held by the spin base 21 and is being rotated.Various nozzles capable of discharging the processing solution to theto-be-processed surface of the substrate 9 can be employed as the nozzle50.

A processing solution supplying portion 83 to be a piping system forsupplying the processing solution to the supply pipe 81 is connectedthereto. Specifically, the processing solution supplying portion 83 isconfigured in combination of an SC-1 supply source 831 a, a DHF supplysource 831 b, an SC-2 supply source 831 c, a rinse liquid supply source831 d, a plurality of pipes 832 a, 832 b, 832 c and 832 d, and aplurality of switching valves 833 a, 833 b, 833 c and 833 d.

The SC-1 supply source 831 a is a supply source for supplying SC-1. TheSC-1 supply source 831 a is connected to the supply pipe 81 through thepipe 832 a having the switching valve 833 a inserted therebetween. Whenthe switching valve 833 a is opened, accordingly, the SC-1 supplied fromthe SC-1 supply source 831 a is discharged from the nozzle 50.

The DHF supply source 831 b is a supply source for supplying DHF. TheDHF supply source 831 b is connected to the supply pipe 81 through thepipe 832 b having the switching valve 833 b inserted therebetween. Whenthe switching valve 833 b is opened, accordingly, the DHF supplied fromthe DHF supply source 831 b is discharged from the nozzle 50.

The SC-2 supply source 831 c is a supply source for supplying SC-2. TheSC-2 supply source 831 c is connected to the supply pipe 81 through thepipe 832 c having the switching valve 833 c inserted therebetween. Whenthe switching valve 833 c is opened, accordingly, the SC-2 supplied fromthe SC-2 supply source 831 c is discharged from the nozzle 50.

The rinse liquid supply source 831 d is a supply source for supplying arinse liquid. Here, the rinse liquid supply source 831 d supplies purewater as the rinse liquid, for example. The rinse liquid supply source831 d is connected to the supply pipe 81 through the pipe 832 d havingthe switching valve 833 d inserted therebetween. When the switchingvalve 833 d is opened, accordingly, the rinse liquid supplied from therinse liquid supply source 831 d is discharged from the nozzle 50. Notethat as the rinse liquid, it is also possible to use pure water, warmwater, ozone water, magnetic water, reduced water (hydrogen water),various organic solvents (ion water, IPA (isopropyl alcohol), functionwater (CO₂ water, etc.) or the like.

When the processing solution (SC-1, DHF, SC-2 or the rinse liquid) issupplied from the processing solution supplying portion 83 to the supplypipe 81, the processing solution is discharged from the nozzle 50 towardthe vicinity of the center of the to-be-processed surface of thesubstrate 9 held by the spin base 21. However, each of the switchingvalves 833 a, 833 b, 833 c and 833 d provided in the processing solutionsupplying portion 83 is electrically connected to the controller 130 andis opened/closed under the control of the controller 130. In otherwords, a discharging mode of the processing solution from the nozzle 50(specifically, a type of the processing solution to be discharged, adischarging start timing, a discharging end timing, a discharging flowrate or the like) is controlled by the controller 130. The nozzle 50,the supply pipe 81 and the processing solution supplying portion 83 forma processing solution discharging portion 83A for discharging theprocessing solution to the to-be-processed surface of the substrate 9under the control of the controller 130.

<1-2. Structure of Shielding Plate and Spin Base>

FIGS. 6 and 7 are longitudinal sectional views showing structures of theshielding plate 90 and the peripheral edge part of the spin base 21 inthe case in which the shielding plate 90 is disposed in the processingposition. FIG. 6 shows a section in the restricting portion 201 and FIG.7 shows a section in a portion other than the restricting portion 201.In examples of FIGS. 6 and 7 , the splash guard 31 has the outer member313 disposed in an upper position and the inner member 312 disposed in alower position. FIG. 8 is a cross sectional view showing the restrictingportion 201. FIG. 9 is a cross sectional view showing anotherrestricting portion 201F according to the first preferred embodiment.

The spin base 21 includes the disk-shaped base 28 taking a circularupper surface shape and the annular flange portion 29 protruded outwardin a radial direction from a slightly lower position than the uppersurface of the base 28 in a peripheral edge (a side surface) of the base28. The base 28 and the flange portion 29 are integrally formed of vinylchloride, for example. The upper surface and the lower surface (in moredetail, a lower surface of a portion other than the base end part in theflange portion 29, that is, a lower surface of the tip side part of theflange portion 29) of the flange portion 29 are formed along ahorizontal surface and the side surface of the base 28 is aperpendicular surface. An annular curved surface (“a curved surfaceportion”) 211 in the circumferential direction of the spin base 21 isformed in the base end part of the flange portion 29. The curved surface211 takes a sectional shape of a ¼ circular arc which is obliquely andupward convex toward the rotation axis a1, for example. A radius of thecircular arc is set to be 5 mm to 10 mm, for example. The lower surfaceof the tip side part of the flange portion 29 and a lower side part ofthe flange portion 29 in the side surface of the base 28 are connectedgently through the curved surface 211.

An annular recess is formed by the upper surface of the flange portion29 and the upper side part of the flange portion 29 in the side surfaceof the base 28. A draining portion (“an upper flange portion”) 27 to bean annular plate-shaped member is fixed to the recess with a bolt. Thedraining portion 27 is preferably formed of fluororesin or the likewhich has a higher heat resisting property than the base 28, forexample. An outer peripheral edge part of the draining portion 27extends outward from the outer peripheral edge of the flange portion 29in the radial direction of the base 28. A diameter of the outerperipheral edge of the draining portion 27, that is, a diameter of theouter peripheral edge of the spin base 21 is larger than a diameter ofthe substrate 9. An upper surface of a portion other than the outerperipheral edge part (“tip part”) in the draining portion 27 forms anidentical horizontal plane to the upper surface of the base 28. Theupper surface of the outer peripheral edge part of the draining portion27 is a curved surface which is overhung and convexly curved obliquelyupward and outward. The outer peripheral edge part has a thicknessreduced gradually closer to the outer peripheral edge. The twoprotrusions 26 described above are protruded from the tip (outer edge)of the outer peripheral edge part of the draining portion 27 outward inthe radial direction of the shielding plate 90, respectively. Theprotrusion 26 is formed to take a shape of a quadrangular prism as shownin FIGS. 5, 6 and 8 , for example. An upper surface 261 of theprotrusion 26 is a horizontal plane taking a rectangular shape. A tipsurface 262 of the protrusion 26 is a perpendicular plane taking arectangular shape which is orthogonal to the upper surface 261 and has anormal passing through a center thereof that intersects with therotation axis a1. Side surfaces 263 and 264 of the protrusion 26 areperpendicular planes taking rectangular shapes which are orthogonal toboth the upper surface 261 and the tip surface 262. The upper surface261 is positioned below the upper surface of the base 28. Consequently,the whole protrusion 26 is positioned below the upper surface of thebase 28.

The body portion 91 of the shielding plate 90 is a disk-shaped memberformed of vinyl chloride, for example. A lower surface 911 other thanthe peripheral edge part in the lower surface of the body portion 91 isopposed to the upper surface of the substrate 9 held by the chuck pin 25of the spin base 21 with a clearance. An interval D2 between the lowersurface 911 and the upper surface of the substrate 9 is approximately 1mm, for example. An annular recess along a peripheral edge is formed onthe peripheral edge part of the lower surface of the body portion 91.Consequently, a thickness of the peripheral edge part of the bodyportion 91 is substantially a half of the other portions. The extendedportion 92 takes an annular shape which can be fitted in the recess. Theextended portion 92 is fitted in the recess and is thus fixed to thebody portion 91 with a bolt. The extended portion 92 is preferablyformed of a material such as fluororesin which is more excellent in aheat resisting property than the body portion 91, for example. Anannular inner peripheral surface 921 of the extended portion 92 standsupward from a lower end thereof and then extends to a part above theperipheral edge part of the substrate 9 toward the rotation axis a1side. An annular peripheral edge part on the rotation axis a1 side inthe inner peripheral surface 921 is connected gently to the lowersurface 911 of the body portion 91 and forms an opposed surface which isopposed to the upper surface of the substrate 9 together with the lowersurface 911. The extended portion 92 constitutes a cylindrical wallportion extending downward from the peripheral edge part of the bodyportion 91, and a tip side part thereof extends to the side part of thespin base 21. A part on the tip side (the lower end side) of theextended portion 92 in the inner peripheral surface 921 of the extendedportion 92 extends to the side part of the spin base 21. The innerperipheral surface 921 on the outer edge side of the extended portion 92is a curved surface which is curved to be overhung obliquely upward andoutward with respect to the upper surface of the spin base 21. In otherwords, the part on the tip side (the lower end side) of the extendedportion 92 in the inner peripheral surface 921 is a curved surface whichis curved to be overhung obliquely upward and outward with respect tothe upper surface of the spin base 21. Consequently, a width of the tipside part of the extended portion 92 in the radial direction of theshielding plate 90 is gradually reduced downward, that is, toward theside part of the spin base 21. Thus, the inner peripheral surface 921 iscontinuous with the lower surface of the shielding plate 90, andfurthermore, is convexly curved to be overhung obliquely upward andoutward with respect to the upper surface of the spin base 21.

The restricting structure 94 is formed in the tip side part of theextended portion 92. The restricting structure 94 is a recess openedfrom the tip surface of the extended portion 92 to the inner peripheralsurface of the extended portion 92 as shown in FIGS. 4, 6 and 8 , forexample. The restricting structure 94 is formed so as to house at leasta part of the protrusion 26 therein when the shielding plate 90 isdisposed in the processing position. An upper surface 941 of therestricting structure 94 is a horizontal plane taking a rectangularshape. A bottom face 942 of the restricting structure 94 is aperpendicular plane taking a rectangular shape which is orthogonal tothe upper surface 941 and has a normal passing through a center thereofthat intersects with the rotation axis a1. Side surfaces 943 and 944 ofthe restricting structure 94 are perpendicular planes taking rectangularshapes which are orthogonal to both the upper surface 941 and the bottomface 942. The upper surface 941 is positioned below the upper surface ofthe base 28 and above the upper surface 261 of the protrusion 26.Consequently, the whole restricting structure 94 is positioned below theupper surface of the base 28.

When the shielding plate 90 is disposed in the processing position, oneof the two restricting structures 94 houses at least a part of one ofthe two protrusions 26, and the other restricting structure 94 houses atleast a part of the other protrusion 26.

In a state brought immediately after the protrusion 26 is housed in therestricting structure 94, when the spin base 21 is stopped, the uppersurface 941 of the restricting structure 94 and the upper surface 261 ofthe protrusion 26 are opposed to each other with a clearance and thebottom face 942 of the restricting structure 94 and the tip surface 262of the protrusion 26 are opposed to each other with a clearance. Then,the side surface 943 of the restricting structure 94 is opposed to theside surface 263 of the protrusion 26, and the side surface 944 of therestricting structure 94 is opposed to the side surface 264 of theprotrusion 26. Consequently, the restricting structure 94 is disposedopposite to the protrusion 26 from ahead of and behind the protrusion 26in the circumferential direction around the rotation axis a1 so thatrelative motion of the protrusion 26 in the circumferential directioncan be restricted. The restricting structure 94 and the protrusion 26form the restricting portion 201 for restricting relative motion betweenthe spin base 21 and the shielding plate 90 in the circumferentialdirection around the rotation axis a1.

As shown in FIG. 7 , a clearance G1 is formed in a part other than therestricting portion 201 between the tip side part of the extendedportion 92 and the side part of the spin base 21, more specifically, thetip part of the draining portion 27 in the state in which the shieldingplate 90 is disposed in the processing position. A width D1 of theclearance G1 is approximately 1 mm to 5 mm, for example. The processingsolution discharged to the to-be-processed surface of the substrate 9 bythe nozzle 50 of the processing portion 5 is discharged to the outsideof the substrate 9 along the to-be-processed surface, and furthermore,is discharged from the peripheral edge part of the spin base 21 to theoutside via the clearance G1. If the tip part of the extended portion 92in the inner peripheral surface 921 of the extended portion 92 and theupper surface of the tip part of the draining portion 27 are curved eachother as described above, the processing solution is discharged smoothlyfrom the clearance G1 to the outside.

The upper end part of the inner peripheral surface 921 of the extendedportion 92 is placed in a higher position than the opposed surface abovean opposed surface which is opposed to the substrate 9 in the lowersurface of the shielding plate 90 (in more detail, a peripheral edgepart of the opposed surface), that is, with respect to the upper surfaceof the spin base 21. Consequently, an annular recess 922 is formed onthe upper end side part of the inner peripheral surface 921. The recess922 is formed in the circumferential direction around the rotation axisa1. The recess 922 is formed between the tip side part of the extendedportion 92 and the part opposed to the substrate 9 in the shieldingplate 90. In other words, the recess 922 is formed in a portion betweenthe tip side part of the extended portion 92 and the opposed partopposed to the substrate 9 in the inside surface 901 of the shieldingplate 90. The inside surface 901 is a surface surrounding the uppersurface and the end face of the substrate 9. The inside surface 901includes the lower surface 911 of the body portion 91 and the innerperipheral surface 921 of the extended portion 92. The recess 922 isrecessed upward from the peripheral edge part of the opposed portionwhich is opposed to the upper surface of the substrate 9 in theshielding plate 90. An annular bulged space (“bulged space”) 923 isformed between the recess 922 and the upper surface of the spin base 21.The space 923 is bulged upward from the opposed surface which is opposedto the substrate 9 in the shielding plate 90. An interval D3 between themost recessed part of the recess 922 and the upper surface of thesubstrate 9 is greater than the interval D2. A width D4 of the recess922 in the radial direction of the shielding plate 90 is preferably setto be equal to or greater than 20 mm, for example.

The curved surface which is convexly curved obliquely upward and outwardwith respect to the upper surface of the spin base 21 is formed asdescribed above in the portion on the outside of the recess 922 (theoutside in the radial direction of the shielding plate 90) with respectto the lower surface 911 in the inside surface 901 of the shieldingplate 90 (in more detail, the inner peripheral surface 921 of theextended portion 92). Note that in the shown example, the lower surface911 is parallel with the upper surface of the substrate 9. However, itis not required that the whole lower surface 911 is parallel with theupper surface of the substrate 9, for example, a part excluding theperipheral edge part of the lower surface 911 gradually becomes higherthan the upper surface of the substrate 9 toward the center of the lowersurface 911.

In some cases, the processing solution discharged from the clearance G1stays in the space between the extended portion 92 and the drainingportion 27 depending on the amount of the processing solution and thewidth of the clearance G1. However, the space 923 formed by the recess922 serves as a buffer. Consequently, it is possible to prevent theprocessing solution from being splashed back and sticking to thenon-processed surface of the substrate 9 due to the staying processedsolution.

Moreover, a part of the processing solution discharged from the tip partof the draining portion 27 hits the restricting structure 94 and theprotrusion 26 and is thus splashed back. However, both the restrictingstructure 94 of the shielding plate 90 and the protrusion 26 of the spinbase 21 are provided below the upper surface of the spin base 21 in thestate in which the shielding plate 90 is disposed in the processingposition. Therefore, the processing solution splashed back is preventedfrom sticking to a major surface (“the non-processed surface”) otherthan the to-be-processed surface of the substrate 9.

If the extended portion 92 and the draining portion 27 are formed offluororesin or the like having an excellent heat resisting property, theshielding plate 90 and the spin base 21 can be prevented from beingdamaged by a high temperature even if the processing solution has thehigh temperature. However, the fluororesin is more excellent in the heatresisting property and has a lower hardness as compared with vinylchloride, for example. In the case in which the rotational drive 23rotates the spin base 21 through the rotating shaft portion 22 in thestate in which the shielding plate 90 is disposed in the processingposition, the protrusion 26 and the restricting structure 94 abut oneach other in acceleration and deceleration. Consequently, therestricting structure 94 and the protrusion 26, that is, members formedof the fluororesin collide with each other so that dust is generated insome cases. When the dust sticks to the substrate 9, a defect is caused.Note that the extended portion 92 and the spin base 21 may be formedintegrally of the same material, respectively.

In the example of the structure in FIG. 9 , in the protrusion 26 of thespin base 21, a surface other than the tip surface 262 in the outerperipheral surface thereof is covered with an O ring or the like whichis formed by an elastic member such as EPDM. Even if the restrictingstructure 94 and the protrusion 26 abut on each other in theacceleration of the spin base 21, the generation of the dust can besuppressed. Note that at least one of the protrusion 26 and therestricting structure 94 can suppress the generation of the dust if apart opposed to the other is covered with the elastic member. Even ifneither the protrusion 26 nor the restricting structure 94 is coveredwith the elastic member, usefulness of the present invention is notdamaged.

FIGS. 12 and 13 are longitudinal sectional views showing a shieldingplate 90B and a spin base 21B as another example of structures of theshielding plate and the spin base in the substrate processing deviceaccording to the first preferred embodiment. FIGS. 12 and 13 showperipheral edge parts of the shielding plate 90B and the spin base 21B.FIG. 12 shows a section in a restricting portion 201 and FIG. 13 shows asection in a part other than the restricting portion 201. The shieldingplate 90B has the same structure as that of the shielding plate 90except that an extended portion 92B is provided in place of the extendedportion 92 of the shielding plate 90. The spin base 21B has the samestructure as that of the spin base 21 except that a draining portion 27Bis provided in place of the draining portion 27 of the spin base 21.

An inner peripheral surface (a lower surface) 921B of the extendedportion 92B is smoothly connected to a lower surface of a part otherthan the thin peripheral edge part of the body portion 91. The recess922 of the extended portion 92 is not formed on the inner peripheralsurface 921B. Moreover, the curved surface provided on the upper surfaceof the tip part of the draining portion 27 is not formed on the drainingportion 27B and a tip surface of the draining portion 27B is aperpendicular plane. The processing solution is discharged from aclearance G2 between the extended portion 92B and the draining portion27B to the outside via the to-be-processed surface of the substrate 9and the peripheral edge part of the upper surface of the spin base 21B.In a part provided with the restricting portion 201, the processingsolution is splashed back by the restricting portion 201 (therestricting structure 94, the protrusion 26).

However, the protrusion 26 provided in the tip part of the drainingportion 27B, that is, the side surface part of the spin base 21B and therestricting structure 94 provided in the tip side part of the extendedportion 92B are disposed below the upper surface of the spin base 21B.Consequently, intrusion and sticking of the processing solution splashedback to the non-processed surface of the substrate 9 can be suppressed.Even if the shielding plate 90B is employed in place of the shieldingplate 90, and furthermore, the spin base 21B is employed in place of thespin base 21, accordingly, the usefulness of the present invention isnot damaged. Moreover, the shielding plate 90B may be combined with thespin base 21 and the shielding plate 90 may be combined with the spinbase 21B.

<1-3. Referring to Another Example of Structure>

FIGS. 10 and 11 are perspective views showing a shielding plate 90A anda spin base 21A as another example of the structures of the shieldingplate and the spin base in the substrate processing device according tothe first preferred embodiment. FIG. 11 is a perspective view showingthe shielding plate 90A and the spin base 21A in the case in which theshielding plate 90A is disposed in a processing position.

The shielding plate 90A has the same structure as that of the shieldingplate 90 except that the extended portion 92A is provided in place ofthe extended portion 92 of the shielding plate 90. The extended portion92A is a cylindrical wall portion extending from the peripheral edgepart of the disk-shaped body portion 91 toward the side of the spin base21A and extending annually in the circumferential direction around therotation axis a1 in the same manner as the extended portion 92. Theextended portion 92A and the extended portion 92 are different from eachother in that the shielding plate 90 includes the two restrictingstructures 94 in the tip side part thereof, while the extended portion92A includes a plurality of restricting structures 94A in a tip sidepart thereof.

Moreover, the spin base 21A has the same structure as that of the spinbase 21 except that a protrusion 26A is provided in the tip part of thedraining portion 27 of the spin base 21 in place of the protrusion 26.The restricting structure 94A and the protrusion 26A form a restrictingportion 201A for mutually restricting relative motion between the spinbase 21A and the shielding plate 90A in the circumferential directionaround the rotation axis a1.

The plurality of restricting structures 94A is provided continuouslyover a whole periphery in the circumferential direction of the tip sidepart of the extended portion 92A. Each of the restricting structures 94Ais a recess formed in such a shape that at least a part of theprotrusion 26A can be housed. Each of the restricting structures 94Apenetrates the tip part of the extended portion 92A in the radialdirection of the shielding plate 90A, and furthermore, is also openeddownward from the tip part. In other words, the restricting structure94A is opened in a direction toward the protrusion 26A protruded fromthe side surface part of the spin base 21A in the direction of therotation axis a1. Note that even if the restricting structure 94A doesnot penetrate the tip part of the extended portion 92A in the radialdirection of the shielding plate 90A like the restricting structure 94shown in FIG. 6 , the usefulness of the present invention is notdamaged. In this case, it is possible to enhance a sealing property ofthe shielding plate 90A to seal the substrate 9.

A width W1 in the circumferential direction of an opening part on atleast a lower side in the restricting structure 94A is graduallyincreased closer to the opening. Specifically, the restricting structure94A includes side surfaces (slant surfaces) 943A and 944A opposedobliquely to each other in the circumferential direction around therotation axis a1. The width W1 in the circumferential direction of theside surface 943A and the side surface 944A is gradually increasedcloser to a lower part.

The protrusion 26A is formed to take a shape of a pentagonal prism, forexample, and an axial direction thereof is set along a radial directionof the spin base 21A. The protrusion 26A includes a horizontal bottomface 267A taking a rectangular shape, and rectangular side surfaces 265Aand 266A standing upward from each of both ends of the bottom face 267Ain the circumferential direction of the spin base 21A, that is, standson the opening side of the restricting structure 94A. The side surfaces265A and 266A are perpendicular planes. Slant surfaces 263A and 264A areconnected to upper ends of the side surfaces 265A and 266A. The slantsurface 263A and the slant surface 264A form a tip part (an upper endpart) of the protrusion 26A. The slant surface 263A and the side surface943A of the restricting structure 94A are substantially parallel witheach other, and the slant surface 264A and the side surface 944A arealso parallel with each other. A width W2 in the circumferentialdirection around the rotation axis a1 of the slant surface 263A and theslant surface 264A is gradually reduced closer to an upper part. Inother words, at least the tip part of the protrusion 26A is opposed tothe restricting structure 94A in the tip side part of the extendedportion 92A, and the width W2 in the circumferential direction aroundthe rotation axis a1 of the tip part is gradually reduced closer to therestricting structure 94. Moreover, the restricting structure 94A andthe protrusion 26A are preferably formed respectively in such a mannerthat at least the tip side part of the protrusion 26A can be fitted inthe opening part on at least the protrusion 26A side in the restrictingstructure 94A.

Here, consideration will be given to the case in which the shieldingplate 90A is moved from a retreat position to a processing position in astate in which at least one of the spin base 21A and the shielding plate90A is not disposed in an initial position in the circumferentialdirection, and any one of them is not locked to be rotated in thecircumferential direction and the other is locked.

The plurality of restricting structures 94A is provided continuouslyover the whole periphery in the circumferential direction of the tipside part of the extended portion 92A. Accordingly, the tip of theprotrusion 26A abuts on any one restricting structure 94A of theplurality of restricting structures 94A in the middle of the movement ofthe shielding plate 90A to the processing position. In most cases, theside surface 944A of the restricting structure 94 and the slant surface264A of the protrusion 26A abut on each other or the side surface 943Aof the restricting structure 94 and the slant surface 263A of theprotrusion 26A abut on each other as shown in FIG. 10 . In other words,the slant surfaces having substantially the same inclinations abut oneach other.

When the shielding plate 90A is further moved to the processing positionin this state, the extended portion 92A is moved to the processingposition with a relative rotation in the circumferential direction withrespect to the spin base 21A in such a manner that a top of therestricting structure 94A and the tip of the protrusion 26A approacheach other in the circumferential direction in the process of thefurther movement of the shielding plate 90A to the processing position.Then, when the shielding plate 90A is disposed in the processingposition as shown in FIG. 11 , the tip side part of the protrusion 26Ais housed in the restricting structure 94A. Consequently, the shieldingplate 90A is restricted in the relative motion in the circumferentialdirection with respect to the spin base 21A.

When the shielding plate 90A is disposed in the processing position,moreover, the upper end of each of the restricting structures 94A andthe upper end of the protrusion 26A are provided below the upper surfaceof the spin base 21A. Also in the case in which the processing solutiondischarged from the to-be-processed surface of the substrate 9 hits therestricting portion 201A and is thus splashed back, accordingly, theprocessing solution splashed back can be prevented from sticking to thenon-processed surface of the substrate 9.

Note that the plurality of restricting structures 94A may be provided inthe circumferential direction in the side surface part of the spin base21A and the protrusion 26A may be provided in the tip side part of theextended portion 92A.

FIGS. 14 to 17 are cross sectional views showing a restricting portion201C formed by a shielding plate 90C and a spin base 21C as anotherexample of the structure of the restricting portion formed by theshielding plate and the spin base in the substrate processing deviceaccording to the first preferred embodiment. The shielding plate 90C isdisposed in a processing position. FIG. 14 shows the restricting portion201 in a state in which the spin base 21 is stationary and FIG. 15 showsthe restricting portion 201C during the rotation of the spin base 21Cwith acceleration. FIG. 16 shows the restricting portion 201C during theconstant speed rotation of the spin base 21C and FIG. 17 shows therestricting portion 201C during the rotation of the spin base 21C withdeceleration.

The spin base 21C is configured in the same manner as the spin base 21except that a protrusion 26C is provided in place of the protrusion 26of the spin base 21. The protrusion 26C is configured in the same manneras the protrusion 26 except that a magnet 101 a is provided therein. Themagnet 101 a has an N pole disposed on the side surface 263 side and anS pole disposed on the side surface 264 side. The magnet 101 a has the Nand S poles provided in the protrusion 26C so as to be arrangedsequentially in substantially the circumferential direction around therotation axis a1.

The shielding plate 90C is configured in the same manner as theshielding plate 90 except that an extended portion 92C is provided inplace of the extended portion 92 of the shielding plate 90. The extendedportion 92C is configured in the same manner as the extended portion 92except that magnets 101 b and 101 c are provided therein. The magnet 101b has N and S poles arranged sequentially in substantially thecircumferential direction around the rotation axis a1, and furthermore,the N pole is provided at an upstream side in the rotating direction ofthe spin base 21C with respect to the restricting structure 94 so as tobe closer to the side surface 943 of the restricting structure 94 thanthe S pole. The magnet 101 c has N and S poles arranged sequentially insubstantially the circumferential direction around the rotation axis a1,and furthermore, the S pole is provided at a downstream side in therotating direction of the spin base 21C with respect to the restrictingstructure 94 so as to be closer to the side surface 944 of therestricting structure 94 than the N pole.

Thus, the magnets 101 a to 101 c are arranged in such a manner that theN pole of the magnet 101 b and the N pole of the magnet 101 a face eachother and the S pole of the magnet 101 a and the S pole of the magnet101 c face each other. Then, a magnetic repulsive force acts between theN poles and between the S poles. Moreover, it is preferable that therespective magnets 101 a to 101 c generate magnetic fields havingsubstantially equal intensities to each other.

In other words, the magnets 101 a to 101 c cause a magnetic repulsiveforce to act to increase respective intervals between the protrusion 26Cand each of the side surfaces 943 and 944 of restricting structure 94disposed ahead of and behind the protrusion 26C in the circumferentialdirection around the rotation axis a1. By the magnetic repulsive force,the relative motion of the protrusion 26C in the circumferentialdirection with respect to the restricting structure 94 is restricted.Moreover, the magnets 101 a to 101 c may be provided in such a mannerthat the respective N and S poles of the magnets 101 a to 101 c areinverted each other.

When the spin base 21 is stationary as shown in FIG. 14 , a force actingto increase an interval between the side surface 943 and the sidesurface 263 and a force acting to increase an interval between the sidesurface 944 and the side surface 264 become substantially equal to eachother, and these intervals become substantially equal to each other. Asshown in FIG. 16 , also when the spin base 21 is rotated at a constantspeed, these intervals become substantially equal to each other.

As shown in FIG. 15 , when the spin base 21 is accelerated, a force forreducing the interval between the side surface 944 and the side surface264 and increasing the interval between the side surface 943 and theside surface 263 further acts by the acceleration of the spin base 21 inaddition to a magnetic repulsive force between the respective magnets.For this reason, the interval between the side surface 944 and the sidesurface 264 becomes greater than the interval between the side surface943 and the side surface 263.

As shown in FIG. 17 , when the spin base 21 is decelerated, a force forincreasing the interval between the side surface 944 and the sidesurface 264 and reducing the interval between the side surface 943 andthe side surface 263 further acts by the deceleration of the spin base21 in addition to a magnetic repulsive force between the respectivemagnets. For this reason, the interval between the side surface 944 andthe side surface 264 becomes smaller than the interval between the sidesurface 943 and the side surface 263.

The respective magnets 101 a to 101 c, the restricting structure 94 andthe protrusion 26C form the restricting portion 201C for restricting therelative motion (position) of the shielding plate 90C with respect tothe spin base 21C in the circumferential direction around the rotationaxis a1.

As shown in FIGS. 14 to 17 , when the shielding plate 90C is disposed inthe processing position, it is preferable that the protrusion 26C andthe restricting structure 94 of the extended portion 92C always restrictthe motion in the circumferential direction around the rotation axis a1each other in a non-constant state during acceleration and decelerationof the spin base 21. In this case, it is possible to completely preventgeneration of dust due to the contact of the protrusion 26C and therestricting structure 94 of the extended portion 92C. Even if theprotrusion 26C and the restricting structure 94 of the extended portion92C come in contact with each other during the acceleration anddeceleration of the spin base 21 due to a magnitude of the repulsiveforce caused to act by each magnet or a magnitude of the acceleration ofthe spin base 21C, it is possible to reduce an impact in the contactgreatly as compared with the case in which the respective magnets 101 ato 101 c are not provided. Even if the protrusion 26C and therestricting structure 94 of the extended portion 92C come in contactwith each other during the acceleration and deceleration of the spinbase 21, accordingly, the usefulness of the present invention is notdamaged.

FIG. 18 is a sectional view showing a restricting portion 201D formed byan extended portion 92D and the spin base 21C as another example of thestructure of the restricting portion formed by the shielding plate andthe spin base in the substrate processing device according to the firstpreferred embodiment. FIG. 19 is a sectional view showing a restrictingportion 201E formed by an extended portion 92E and the spin base 21C asanother example of the structure of the restricting portion formed bythe shielding plate and the spin base in the substrate processing deviceaccording to the first preferred embodiment. FIGS. 18 and 19 aresectional views in which the restricting portions 201D and 201E partsare cut by a cylinder around the rotation axis a1, respectively.

The spin base 21C shown in FIGS. 18 and 19 has the same structure asthat of the spin base 21C shown in FIG. 14 . A shielding plate 90D ofFIG. 18 is configured in the same manner as the shielding plate 90Cexcept that the extended portion 92D is provided in place of theextended portion 92C of the shielding plate 90C in FIG. 14 . Theextended portion 92D is configured in the same manner as the extendedportion 92C except that a magnet 101 d is further provided therein. Itis preferable that respective magnets 101 a to 101 e generate magneticfields having substantially equal intensities to each other. The magnet101 d has N and S poles provided to be sequentially arranged insubstantially the circumferential direction around the rotation axis a1along the upper surface 941 of the restricting structure 94. The N poleof the magnet 101 d faces an N pole of the magnet 101 a and the S poleof the magnet 101 d faces an S pole of the magnet 101 a. Consequently, amagnetic repulsive force acts between the magnets 101 a and 101 d. Thus,a force for increasing an interval between the upper surface 941 and theupper surface 261 acts.

The magnets 101 a to 101 c cause a magnetic repulsive force to act. Themagnetic repulsive force serves to increase the respective intervalsbetween the side surfaces 943 and 944 of the restricting structure 94and the protrusion 26C in the circumferential direction around therotation axis a1. Furthermore, the magnets 101 a and 101 d cause amagnetic repulsive force to act in order to increase the intervalbetween the upper surface 941 of the restricting structure 94 and theupper surface 261 of the protrusion 26C in the direction of the rotationaxis a1 (the perpendicular direction). Consequently, motion in which theupper surface 941 and the upper surface 261 approach each other isrestricted and a mutual contact is also suppressed. Therefore, it ispossible to further suppress the generation of dust due to the contactof the restricting structure 94 and the protrusion 26C.

The respective magnets 101 a to 101 d, the restricting structure 94 andthe protrusion 26C form the restricting portion 201D for restricting therelative motion (position) of the shielding plate 90C with respect tothe spin base 21C in both the circumferential direction around therotation axis a1 and the perpendicular direction.

A shielding plate 90E of FIG. 19 is configured in the same manner as theshielding plate 90C except that the extended portion 92E is provided inplace of the extended portion 92C of the shielding plate 90C in FIG. 14. The extended portion 92E is configured in the same manner as theextended portion 92C except that magnets 101 e and 101 f are furtherprovided therein. It is preferable that the respective magnets 101 a to101 c, 101 e and 101 f generate magnetic fields having substantiallyequal intensities to each other. The magnet 101 e is provided above theupper surface 941 of the restricting structure 94 in such a manner thatan N pole thereof is close to the upper surface 941 and an S pole ispositioned thereabove. Moreover, the N pole of the magnet 101 d and theN pole of the magnet 101 a face each other. The magnet 101 f is providedabove the upper surface 941 of the restricting structure 94 in such amanner that an S pole thereof is close to the upper surface 941 and an Npole is positioned thereabove. Moreover, the S pole of the magnet 101 dand the S pole of the magnet 101 a face each other.

Consequently, a magnetic repulsive force acts between the magnets 101 aand 101 e, and furthermore, a magnetic repulsive force also acts betweenthe magnets 101 a and 101 f. Consequently, a force for increasing theinterval between the upper surfaces 941 and 261 acts.

The magnets 101 a to 101 e cause a magnetic repulsive force to act. Themagnetic repulsive force serves to increase the respective intervalsbetween the side surfaces 943 and 944 of the restricting structure 94and the protrusion 26C in the circumferential direction around therotation axis a1. Furthermore, the magnets 101 a, 101 e and 101 f causea magnetic repulsive force to act in order to increase the intervalbetween the upper surface 941 of the restricting structure 94 and theupper surface 261 of the protrusion 26C in the direction of the rotationaxis a1 (the perpendicular direction). Consequently, the motion in whichthe upper surface 941 and the upper surface 261 approach each other isrestricted and the mutual contact is also suppressed. Therefore, it ispossible to further suppress the generation of the dust due to thecontact of the restricting structure 94 and the protrusion 26C.

The respective magnets 101 a to 101 c, 101 e and 101 f, the restrictingstructure 94 and the protrusion 26C form the restricting portion 201Efor restricting the relative motion (position) of the shielding plate90C with respect to the spin base 21C in both the circumferentialdirection around the rotation axis a1 and the perpendicular direction.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above, theextended portion 92 extends from the peripheral edge part of the bodyportion 91 of the shielding plate 90 to the side of the spin base 21.The protrusion 26 is provided in one part of the tip side part of theextended portion 92 and the side surface part of the spin base 21, andfurthermore, the restricting structure 94 is provided in the other part.The protrusion 26 and the restricting structure 94 are disposed belowthe upper surface of the spin base 21. Accordingly, the processingsolution discharged from the substrate 9 can be prevented from beingsplashed back by the protrusion 26 or the restricting structure 94 tostick to the non-processed surface of the substrate 9.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,moreover, at least one of the protrusion 26 and the restrictingstructure 94 has a part opposed to the other and is covered with theelastic member. Therefore, it is possible to suppress an impact in thecontact of the protrusion 26 and the restricting structure 94.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,furthermore, the shielding plate 90 is relatively moved with respect tothe spin base 21 in the direction of the rotation axis a1 between theprocessing position in which the restricting structure 94 is disposedopposite to the protrusion 26 from ahead of and behind the protrusion 26in the circumferential direction around the rotation axis a1 and theretreat position in which the restricting structure 94 is disposedrelatively apart from the protrusion 26 in the direction of the rotationaxis a1. Consequently, it is possible to easily switch the restrictingstate in which the restricting structure 94 restricts the relativemotion in the circumferential direction of the protrusion 26 and therelease state in which the restriction is not performed.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,moreover, the restricting structure 94 is the recess formed so as to becapable of house at least a part of the protrusion 26. Accordingly, thetip side part of the extended portion 92 of the shielding plate 90 andthe side surface part of the spin base 21 can be caused to approach eachother. Therefore, it is possible to reduce a size of the shielding plate90.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,furthermore, the protrusion 26A abuts on an opposed recess of theplurality of recesses (the restricting structure 94A) in the process inwhich the shielding plate 90A is relatively moved with respect to thespin base 21A from the retreat position to the processing position. Inthe state in which the rotation of the shielding plate 90A around therotation axis a1 is not restricted, the shielding plate 90A is moved tothe processing position in the direction of the rotation axis a1 whilethe relative position in the circumferential direction of the shieldingplate 90A with respect to the spin base 21A is corrected in such amanner that the protrusion 26A is guided from the recess to a moredeeply recessed part due to the respective shapes of the recess and theprotrusions 26A after the tip part of the protrusion 26A abuts on therecess. After the shielding plate 90A is moved to the processingposition, the recess restricts the motion of the protrusion 26A in thecircumferential direction and the relative motion in the circumferentialdirection of the shielding plate 90A with respect to the spin base 21Ais restricted. Even if the relative position in the circumferentialdirection of the shielding plate 90A with respect to the spin base 21Ais not aligned, accordingly, the recess of the plurality of recesseswhich is opposed to the protrusion 26A forms a restricting structure forrestricting the relative motion of the protrusion 26A in thecircumferential direction. Consequently, it is possible to restrict therelative motion in the circumferential direction of the shielding plate90A with respect to the spin base 21A.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,moreover, the plurality of magnets 101 a and 101 b causes the magneticrepulsive force to act in order to increase the respective intervalsbetween the protrusion 26C and the respective portions of therestricting structure 94 disposed ahead of and behind the protrusion 26Cin the circumferential direction. Consequently, the relative motion ofthe protrusion 26C in the circumferential direction with respect to therestricting structure 94 is restricted. Accordingly, it is possible tosuppress the contact of the restricting structure 94 and the protrusion26C.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,furthermore, the restricting structure 94 includes the upper surface 941disposed opposite to the protrusion 26C in the direction of the rotationaxis a1. The plurality of magnets 101 a and 101 d (101 e and 101 f)causes the magnetic repulsive force to act in order to increase theinterval between the protrusion 26C and the upper surface 941 in thedirection of the rotation axis a1. Consequently, motion for theprotrusion 26C to approach the upper surface 941 in the direction of therotation axis a1 is restricted. Accordingly, it is possible to furthersuppress the contact of the restricting structure 94 and the protrusion26C.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,moreover, the protrusion 92 is the cylindrical wall portion providedalong the peripheral edge part of the shielding plate 90. Therefore, theextended portion 92 does not cross the flow of the processing solutiondischarged from the surface of the substrate 9 to the outside bycentrifugal force. Consequently, it is possible to suppress scatteringof the processing solution in the extended portion 92. Therefore, theprocessing solution can further be prevented from being splashed back bythe protrusion 26 or the restricting structure 94 to stick to thenon-processed surface of the substrate 9.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,furthermore, the inner peripheral surface 921 of the cylindrical wallportion (the extended portion 92) includes the curved surface which iscontinuous with the lower surface of the shielding plate 90, andfurthermore, is convexly curved obliquely upward and outward withrespect to the upper surface of the spin base 21. The processingsolution discharged from the surface of the substrate 9 to the outsideby the centrifugal force easily flows smoothly along the innerperipheral surface 921. Therefore, the processing solution is easilydischarged from the clearance G1 between the inner peripheral surface921 and the spin base 21 to the outside.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,furthermore, the shielding plate 90 includes the annular recess 922formed in a portion of the inside surface 901 surrounding the uppersurface and the end face of the substrate 9, the portion being disposedbetween the tip side part of the extended portion 92 and the opposedpart of the inside surface opposed to the substrate 9, and the annularrecess 922 is recessed upward relative to the peripheral edge part ofthe opposed portion. Consequently, the annular space 923 bulged upwardrelative to the opposed part is formed on the outside of the peripheraledge part of the substrate 9. Therefore, the processing solutionsupplied to the substrate 9, discharged from the substrate 9 and thensplashed back from the inner peripheral surface 921 of the extendedportion 92 can be prevented from sticking to the non-processed surfaceof the substrate 9.

According to the substrate processing device in accordance with thefirst preferred embodiment having the structure described above,moreover, the spin base 21 and the shielding plate 90 are rotated at thesame speed in the same direction around the rotation axis a1. Therefore,it is possible to suppress generation of an air flow toward the centerc1 side of the substrate 9 between the upper surface of the substrate 9and the lower surface of the shielding plate 90. Consequently, it ispossible to further prevent the processing solution from sticking to thenon-processed surface of the substrate 9. According to the substrateprocessing device in accordance with the first preferred embodimenthaving the structure described above, furthermore, the curved surfaceconvexly curved obliquely upward and outward with respect to the uppersurface of the spin base 21 is formed in the portion of the insidesurface 901 positioned more outward than the annular recess 922 in theradial direction of the shielding plate 90. Consequently, the processingsolution emitted to the substrate 9 and discharged from the substrate 9easily flows to the tip side of the extended portion 92 along the curvedsurface. Accordingly, it is possible to prevent the processing solutionfrom being splashed back from the portion which is disposed, in theinside surface 901 of the shielding plate 90, more outward than theannular recess 922 in the radial direction. Therefore, the processingsolution can further be prevented from sticking to the non-processedsurface of the substrate 9.

2. Referring to Second Preferred Embodiment

<2-1. Structure of Substrate Processing Device 1A>

FIG. 20 is a schematic view for explaining a structure of a substrateprocessing device 1A. The substrate processing device 1A has the samestructure as that of the substrate processing device 1 except that aprocessing portion 5A is provided in place of the processing portion 5of the substrate processing device 1 and a rinse liquid supplyingportion 84 is further provided. In other words, the substrate processingdevice 1A has the structure shown in FIGS. 2 to 9 in the same manner asin the substrate processing device 1. FIG. 20 shows a state in which ashielding plate 90 is disposed in a retreat position. Moreover, theshielding plate 90 disposed in a processing position is shown in avirtual line. Furthermore, the substrate processing device 1A can employanother example of the structures of the shielding plate and the spinbase shown in FIGS. 10 to 13 and can employ another example of thestructure of the restricting portion shown in FIGS. 14 to 19 in the samemanner as the substrate processing device 1. Referring to the substrateprocessing device 1A, accordingly, description will be given to adifferent structure from that of the substrate processing device 1.Referring to the same structure, a part or whole of the description willbe omitted except for reference in the description of the differentstructure.

<Processing Portion 5A>

The processing portion 5A performs a processing for a to-be-processedsurface (a lower surface in the example of FIG. 20 ) of a substrate 9held by a spin base 21. Specifically, the processing portion 5A suppliesa processing solution to the to-be-processed surface of the substrate 9held by the spin base 21, that is, the lower surface. Moreover, theprocessing portion 5A supplies a rinse liquid along an upper surface ofthe spin base 21 to clean the upper surface.

As shown in FIG. 20 , the processing portion 5A includes a supply pipe81 disposed in penetration through a hollow part of a rotating shaftportion 22 of a spin chuck 2 and a through hole 21 a, for example. Anozzle 50A is connected to a tip of the supply pipe 81 (an end on thesubstrate 9 side). A processing solution supply pipe 811 and a rinseliquid supply pipe 812 are inserted in the supply pipe 81. A processingsolution supplying portion 83 to be a piping system for supplying theprocessing solution to the processing solution supply pipe 811 isconnected thereto. A rinse liquid supplying portion 84 to be a pipingsystem for supplying a rinse liquid to the rinse liquid supply pipe 812is connected thereto.

FIG. 21 is a schematic view for explaining a structure of the nozzle50A. The nozzle 50A includes a circular plate-shaped member 51 opposedin substantially parallel, with a clearance, to surfaces of both acentral part of the lower surface of the substrate 9 and the uppersurface of the spin base 21. A central axis of the plate-shaped member51 is a rotation axis a1 in the same manner as the rotating shaftportion 22. A diameter of the plate-shaped member 51 is set to besubstantially equal to or slightly larger than a diameter of therotating shaft portion 22, for example.

The plate-shaped member 51 has an upper surface 52 opposed insubstantially parallel to the lower surface of the substrate 9, and alower surface 53 opposed in substantially parallel with a central partof the upper surface of the spin base 21. A central part of the uppersurface 52 takes a convex shape toward the substrate 9 side from aperipheral edge part of the upper surface 52, and a central part of thelower surface 53 takes a convex shape toward the upper surface side ofthe spin base 21 from the central part of the lower surface 53. In theexample of FIG. 21 , the central part of the upper surface 52 is formedin a shape of a truncated cone and the central part of the lower surface53 is formed in a shape of a disk.

A processing solution discharging port 54 having an opening opposed tothe center of the substrate 9 is provided in the central part of theupper surface 52 of the plate-shaped member 51. The processing solutiondischarging port 54 is connected to the processing solution supply pipe811. The processing solution discharging port 54 discharges theprocessing solution supplied from the processing solution supplyingportion 83 through the processing solution supply pipe 811 in ansubstantially perpendicular direction from below the central part of thesubstrate 9 toward the central part of the lower surface of thesubstrate 9. Moreover, a rinse liquid discharging port (a “cleaningliquid discharging port”) 55 is provided on a side surface of thecentral part of the upper surface 52, and a rinse liquid dischargingport 56 is provided on a side surface of the central part of the lowersurface 53. The rinse liquid discharging ports 55 and 56 are connectedto the rinse liquid supply pipe 812, respectively. The rinse liquiddischarging ports 55 and 56 discharge the rinse liquid supplied from therinse liquid supplying portion 84 through the rinse liquid supply pipe812 outward in the radial direction of the spin base 21 along the uppersurface of the spin base 21, respectively. In more detail, the rinseliquid discharging port 55 discharges the rinse liquid outward in theradial direction of the spin base 21 along the surfaces of both theupper surface 52 and the upper surface of the spin base 21, and therinse liquid discharging port 56 discharges the rinse liquid outward inthe radial direction of the spin base 21 along the surfaces of both thelower surface 53 and the upper surface of the spin base 21.

The nozzle 50A may include only any one of the rinse liquid dischargingports 55 and 56. Moreover, a side surface discharging port formed on anouter peripheral surface (a side surface) of the plate-shaped member 51and discharging the rinse liquid outward in the radial direction of thespin base 21 along the upper surface of the spin base 21 may be providedin place of the rinse liquid discharging ports 55 and 56 or in additionto at least one of the rinse liquid discharging ports 55 and 56.

Note that the substrate processing device 1A may further be providedwith a nozzle capable of supplying the processing solution to an uppersurface of the substrate 9 (in more detail, the whole upper surface or aperipheral edge part). Such a nozzle is provided on the shielding plate90, for example.

The rinse liquid supplying portion 84 specifically includes a rinseliquid supply source 841 d, a pipe 842 d and a switching valve 843 d.

The nozzle 50A can discharge SC-1, DHF and SC-2 supplied from an SC-1supply source 831 a, a DHF supply source 831 b and an SC-2 supply source831 c in the same manner as the nozzle 50 of the substrate processingdevice 1.

The rinse liquid supply sources 831 d and 841 d are supply sources forsupplying the rinse liquid. Here, the rinse liquid supply sources(“cleaning liquid supply sources”) 831 d and 841 d supply pure water asthe rinse liquid, for example. The rinse liquid supply source 831 d isconnected to the processing solution supply pipe 811 through a pipe 832d having a switching valve 833 d inserted therebetween. When theswitching valve 833 d is opened, accordingly, the rinse liquid suppliedfrom the rinse liquid supply source 831 d is discharged from theprocessing solution discharging port 54 of the nozzle 50A. Moreover, therinse liquid supply source 841 d is connected to the rinse liquid supplypipe 812 through the pipe 842 d having the switching valve 843 dinserted therebetween. When the switching valve 843 d is opened,accordingly, the rinse liquid supplied from the rinse liquid supplysource 841 d is discharged from the rinse liquid discharging ports 55and 56 of the nozzle 50A. Note that as the rinse liquid, it is alsopossible to use pure water, warm water, ozone water, magnetic water,reduced water (hydrogen water), various organic solvents (ion water, IPA(isopropyl alcohol), function water (CO₂ water, etc.) or the like.

When the processing solution (SC-1, DHF, SC-2 or the rinse liquid) issupplied from the processing solution supplying portion 83 to theprocessing solution supply pipe 811, the processing solution isdischarged from the processing solution discharging port 54 of thenozzle 50A toward the vicinity of the center of the to-be-processedsurface of the substrate 9 held by the spin base 21. When the rinseliquid is supplied from the rinse liquid supplying portion 84 to therinse liquid supply pipe 812, moreover, the rinse liquid is dischargedfrom the rinse liquid discharging ports 55 and 56 of the nozzle 50Aoutward in the radial direction of the spin base 21 along the uppersurface of the spin base 21. However, each of the switching valves 833a, 833 b, 833 c and 833 d provided in the processing solution supplyingportion 83 and the switching valve 843 d provided in the rinse liquidsupplying portion 84 are electrically connected to the controller 130and are opened/closed under control of the controller 130. In otherwords, a discharging mode of the processing solution (that is, theprocessing solution and the rinse liquid) from the nozzle 50A(specifically, a type of the processing solution to be discharged, adischarging start timing, a discharging end timing, a discharging flowrate or the like) is controlled by the controller 130.

Note that the nozzle 50A can perform the discharge of the processingsolution from the processing solution discharging port 54 and thedischarge of the rinse liquid from the rinse liquid discharging ports 55and 56 simultaneously, and the nozzle 50A capable of selectivelyperforming the discharge of the processing solution and the discharge ofthe rinse liquid, the supply pipe 81 and the processing solutionsupplying portion 83 form a processing solution discharging portion 83Afor discharging the processing solution to the to-be-processed surfaceof the substrate 9 under the control of the controller 130. The nozzle50A, the supply pipe 81 and the rinse liquid supplying portion 84 form arinse liquid discharging portion 84A for discharging the rinse liquidoutward in the radial direction of the spin base 21 along the uppersurface of the spin base 21.

<2-2. Referring to Operation of Substrate Processing Device>

FIG. 22 is a flowchart showing an example of an operation of thesubstrate processing device 1A. The operation of the substrateprocessing device 1A will be described below based on the flowchart ofFIG. 22 . The flowchart shows an operation for the substrate processingdevice 1A to perform a processing for the lower surface of the substrate9 using the processing solution and cleaning for the upper surface ofthe spin base 21 using the rinse liquid from a state in which the spinbase 21 has already held the substrate 9.

When the substrate processing device 1A performs the processing for thelower surface of the substrate 9 with the processing solution suppliedby the processing solution supplying portion 83 and the cleaning for theupper surface of the spin base 21 with the rinse liquid supplied by therinse liquid supplying portion 84, the controller 130 first drives arotational drive 23 to rotate the spin base 21 holding the substrate 9,thereby starting the rotation of the substrate 9 (step S10).

The substrate processing device 1A controls the processing solutionsupplying portion 83 and the rinse liquid supplying portion 84 to startthe discharge of the processing solution and the rinse liquid in thestate in which the substrate 9 is rotated (step S20). Specifically, thecontroller 130 selectively opens the switching valves 833 a to 833 d,thereby causing the processing solution supplying portion 83 to startthe supply of the processing solution (SC-1, DHF, SC-2 or the rinseliquid), for example. The processing solution is supplied to theprocessing solution discharging port 54 of the nozzle 50A through theprocessing solution supply pipe 811 and the processing solutiondischarging port 54 starts to discharge the processing solution towardthe lower surface of the substrate 9. The processing solution dischargedto the lower surface spreads toward the peripheral edge side of thesubstrate 9 over the lower surface of the substrate 9 which is beingrotated, in such a manner that among the lower surface of the substrate9 and the spin base 21, the processing solution comes in contact onlywith the lower surface of the substrate 9 without coming in contact withthe spin base 21.

The controller 130 opens the switching valve 843 d to cause the rinseliquid supplying portion 84 to start the supply of the rinse liquidsimultaneously with the start of the supply of the processing solution.The rinse liquid is supplied to the rinse liquid discharging ports 55and 56 of the nozzle 50A through the rinse liquid supply pipe 812, andthe rinse liquid discharging ports 55 and 56 start to discharge therinse liquid outward in the radial direction of the spin base 21 alongthe upper surface of the spin base 21.

The discharged rinse liquid spreads toward the peripheral edge side ofthe spin base 21 over the upper surface of the spin base 21 which isbeing rotated, in such a manner that among the lower surface of thesubstrate 9 and the upper surface of the spin base 21, the rinse liquidcomes in contact only with the upper surface of the spin base 21 withoutcoming in contact with the lower surface of the substrate 9.Consequently, the substrate processing device 1A simultaneously performsthe processing for the lower surface of the substrate 9 with theprocessing solution and the processing for cleaning the upper surface ofthe spin base 21. A rotating speed of a substrate W during theprocessing is set to be 300 rpm, for example. A processing time is setto be 30 seconds or the like, for example.

When the processing for the lower surface of the substrate 9 is ended,the substrate processing device 1A controls the processing solutionsupplying portion 83 and the rinse liquid supplying portion 84 to stopthe discharge of the processing solution and the rinse liquid in thestate in which the substrate 9 is being rotated (step S30).Specifically, the controller 130 closes the switching valves 833 a to833 d to cause the processing solution supplying portion 83 to stop thesupply of the processing solution, for example. Consequently, theprocessing solution discharging port 54 stops the discharge of theprocessing solution toward the lower surface of the substrate 9. Thecontroller 130 closes the switching valve 843 d to cause the rinseliquid supplying portion 84 to stop the supply of the rinse liquidsimultaneously with the stop of the discharge of the processingsolution. Consequently, the rinse liquid discharging ports 55 and 56stop the discharge of the rinse liquid.

The processing for the lower surface of the substrate 9 through thedischarge of the processing solution and the processing for the uppersurface of the spin base 21 through the discharge of the rinse liquidmay be performed simultaneously as described above or may be performedsequentially.

When the processing for the lower surface of the substrate 9 and theprocessing for cleaning the upper surface of the spin base 21 with acleaning liquid are ended, the controller 130 controls the rotationaldrive 23 to rotate the spin base 21 at a high speed so that thesubstrate processing device 1A performs a removal processing forremoving a solution such as the processing solution sticking to thesubstrate 9 and the nozzle 50A or the rinse liquid to dry the substrate9 and the nozzle 50A (a “solution removal processing”) (step S40).

When the solution removal processing is ended, the controller 130 of thesubstrate processing device 1A controls the rotational drive 23 to stopthe rotation of the spin base 21 (step S50) and to end a series ofsubstrate processing.

By any of the substrate processing method according to the secondpreferred embodiment described above and the substrate processing deviceaccording to the second preferred embodiment having the structuredescribed above, the cleaning liquid is discharged outward in the radialdirection of the spin base 21 along the upper surface of the spin base21. Consequently, it is possible to clean the upper surface of the spinbase 21 with the cleaning liquid and to wash away the processingsolution dropping from the lower surface of the substrate 9 with thecleaning liquid before the processing solution sticks to the uppersurface of the spin base 21 while suppressing mixture of the cleaningliquid with the processing solution hitting the lower surface of thesubstrate 9 to stick to the lower surface. Accordingly, it is possibleto suppress the processing solution supplied to the lower surface of thesubstrate 9 from dropping and sticking onto the spin base 21 andremaining as it is.

By any of the substrate processing method according to the secondpreferred embodiment described above and the substrate processing deviceaccording to the second preferred embodiment having the structuredescribed above, moreover, the discharge of the processing solution tothe lower surface of the substrate 9 and the discharge of the cleaningliquid along the upper surface of the spin base 21 are performedsimultaneously. Therefore, it is possible to efficiently prevent theprocessing solution discharged to the back face of the substrate 9 fromsticking to the upper surface of the spin base 21.

By any of the substrate processing method according to the secondpreferred embodiment described above and the substrate processing deviceaccording to the second preferred embodiment having the structuredescribed above, furthermore, the cleaning liquid is discharged outwardin the radial direction of the spin base 21 along the surfaces of boththe upper or lower surface of the plate-shaped member 51 of the nozzle50A and the upper surface of the spin base 21. Therefore, it is alsopossible to clean the nozzle 50A during the cleaning for the spin base21.

By any of the substrate processing method according to the secondpreferred embodiment described above and the substrate processing deviceaccording to the second preferred embodiment having the structuredescribed above, moreover, the cleaning liquid is discharged outward inthe radial direction of the spin base 21 along the upper surface of thespin base 21 from the rinse liquid discharging ports 55 and 56 providedon the side surface of the plate-shaped member 51 of the nozzle 50A.Accordingly, it becomes easy to lengthen the shapes of the rinse liquiddischarging ports 55 and 56 in the circumferential direction of theplate-shaped member 51, thereby spreading the cleaning liquid to bedischarged.

3. Referring to Third Preferred Embodiment

<3-1. Structure of Substrate Processing Device 1B>

FIG. 23 is a schematic view for explaining a structure of a substrateprocessing device 1B. The substrate processing device 1B has the samestructure as that of the substrate processing device 1 except that acleaning portion 6 and a rinse liquid supplying portion 85 are furtherprovided. In other words, the substrate processing device 1B has thestructure shown in FIGS. 2 to 9 in the same manner as the substrateprocessing device 1. FIG. 23 shows a state in which a shielding plate 90is disposed in a retreat position. Moreover, the shielding plate 90disposed in a processing position is shown in a virtual line.Furthermore, the substrate processing device 1B can employ anotherexample of the structures of the shielding plate and the spin base shownin FIGS. 10 to 13 and can employ another example of the structure of therestricting portion shown in FIGS. 14 to 19 in the same manner as thesubstrate processing device 1. Referring to the substrate processingdevice 1B, accordingly, description will be given to a differentstructure from that of the substrate processing device 1. Referring tothe same structure, a part or whole of the description will be omittedexcept for reference in the description of the different structure.

<Cleaning Portion 6>

A cleaning portion 6 performs a cleaning processing for both a sidesurface of a spin base 21 and an inner member 312 of a splash guard 31.Specifically, the cleaning portion 6 supplies a processing solution to alower surface of a flange portion 29 (FIG. 6 ) of the spin base 21 frombelow the flange portion 29. As shown in FIG. 23 , the cleaning portion6 includes a plurality of (for example, four) rinse liquid dischargingports 86 and a plurality of (for example, two) rinse liquid dischargingports 87 which are provided on a side surface of a casing 24 of a spinchuck 2, for example.

The plurality of rinse liquid discharging ports 86 is distributed andprovided in a circumferential direction of the spin base 21 below alower surface of the flange portion 29 of the spin base 21 (morepreferably, a curved surface 211 (FIG. 6 ) to be a lower surface of abase end part of the flange portion 29), facing the lower surface. Eachof the rinse liquid discharging ports 86 is configured to enable therinse liquid to be discharged upward in a perpendicular direction towardthe lower surface of the flange portion 29 (more preferably, the curvedsurface 211).

The plurality of rinse liquid discharging ports 87 is distributed andprovided in the circumferential direction of the spin base 21 oppositeto a peripheral edge part of a lower surface of a disk-shaped base 28(FIG. 6 ) of the spin base 21 and below the peripheral edge part. Eachof the rinse liquid discharging ports 87 is configured to enable therinse liquid to be discharged upward in the perpendicular directiontoward the peripheral edge part of the lower surface of the base 28.

Note that an axis of the casing 24 described above is coincident with arotation axis a1. An upper end part of the casing 24 is formedcylindrically with the rotation axis a1 set to be an axis, and adiameter thereof is slightly smaller than a diameter of the disk-shapedbase 28 of the spin base 21. Accordingly, the peripheral edge part ofthe lower surface of the base 28 is protruded outward from an outerperipheral surface of an upper end part of the casing 24 to surround theouter peripheral surface as seen from below. Consequently, the rinseliquid can be discharged from below toward the peripheral edge part ofthe lower surface of the base 28. Moreover, the casing 24 includes aslant surface which is opposed obliquely to the lower surface of theflange portion 29 of the spin base 21. The slant surface takes a shapesuch as a side surface of a truncated cone and a diameter is graduallyreduced closer to an upper end (the spin base 21 side). Each of therinse liquid discharging ports 86 and 87 is opened and disposed on theslant surface, for example.

A rinse liquid supplying portion 85 is connected to each of the rinseliquid discharging ports 86 and 87. The rinse liquid supplying portion85 is a piping system for supplying the rinse liquid to the respectiverinse liquid discharging ports 86 and 87. The rinse liquid supplyingportion 85 supplies the rinse liquid when the spin base 21 is rotated.The rinse liquid supplying portion 85 is specifically configured incombination of a rinse liquid supply source 851 d, a pipe 852 d and aswitching valve 853 d.

The rinse liquid supply source 851 d is a supply source for supplyingthe rinse liquid. Here, the rinse liquid supply source 851 d suppliespure water as the rinse liquid, for example. The rinse liquid supplysource 851 d is connected to the respective rinse liquid dischargingports 86 and 87 through a pipe 852 d having a switching valve 853 dinserted therebetween. The pipe 852 d is branched into a plurality ofbranch pipes inside of the casing 24 and an upper end of each of thebranch pipes is connected to each of the rinse liquid discharging ports86 and 87. When the switching valve 853 d is opened, accordingly, therinse liquid supplied from the rinse liquid supply source 851 d isdischarged from the respective rinse liquid discharging ports 86 and 87.Note that as the rinse liquid, it is also possible to use pure water,warm water, ozone water, magnetic water, reduced water (hydrogen water),various organic solvents (ion water, IPA (isopropyl alcohol), functionwater (CO₂ water, etc.) or the like.

An inner member 312 (an outer member 313) can receive a processingsolution supplied from a nozzle 50 to a substrate 9 and then dischargedfrom the substrate 9 in a state in which it is disposed in an upperposition thereof. In a state in which the inner member 312 is disposedin a lower position thereof, moreover, an upper end of the inner member312 is positioned on a side of the flange portion 29 of the spin base21.

When the rinse liquid is supplied from the rinse liquid supplyingportion 85 to the rinse liquid discharging ports 86 and 87, the rinseliquid is discharged from the rinse liquid discharging ports 86 and 87toward the lower surface of the flange portion 29 of the spin base 21and the peripheral edge part of the lower surface of the base 28. Thelower surface of the base 28 is cleaned with the rinse liquid dischargedtoward the peripheral edge part of the lower surface of the base 28. Therinse liquid discharged toward the lower surface of the flange portion29 advances along the side surface of the base 28 to hit the lowersurface of the flange portion 29 while cleaning the side surface. Theprocessing solution is moved to an outside in the radial direction ofthe spin base 21 along the lower surface of the flange portion 29 bycentrifugal force generated by the rotation of the spin base 21 and isdischarged from a tip part of the flange portion 29 to the outside ofthe spin base 21. The inner member 312 disposed in a lower positionreceives the rinse liquid discharged to the outside of the spin base 21by an inner peripheral surface of an upper end side part thereof.Consequently, the inner peripheral surface of the inner member 312 iscleaned. However, the switching valve 853 d provided in a rinse liquidsupplying portion 85 is electrically connected to a controller 130 andis opened/closed under control of the controller 130. In other words, amode for discharging the rinse liquid from the rinse liquid dischargingports 86 and 87 (specifically, a discharging start timing, a dischargingend timing, a discharging flow rate or the like) is controlled by thecontroller 130. The rinse liquid discharging ports 86 and 87 and therinse liquid supplying portion 85 form a rinse liquid dischargingportion (a “cleaning liquid discharging portion”) 85A for dischargingthe rinse liquid under the control of the controller 130.

<3-2. Operation and Structure of Substrate Processing Device>

FIG. 24 is a flowchart showing an operation for the substrate processingdevice 1B to perform the processing for the lower surface of thesubstrate 9 and the processing for cleaning the side surface of the spinbase 21 and the inner member 312 by the nozzle 50 and the cleaningportion 6. FIG. 25 is a schematic view for explaining the operationshown in the flowchart of FIG. 24 . FIG. 25 shows a longitudinal sectionof the substrate processing device 1B in accordance with order of theprocessing in FIG. 24 . FIG. 26 is a schematic view for explaining theoperation of step S150 in the flowchart of FIG. 24 in more detail. StepS150 is a step for the substrate processing device 1B to perform thecleaning processing by the cleaning portion 6. FIG. 26 shows alongitudinal section of a portion including peripheral edge parts of theshielding plate 90 and the spin base 21, and a part of upper sides ofthe inner member 312 and the outer member 313 in the substrateprocessing device 1B. A splash guard 31 has the outer member 313disposed in an upper position and the inner member 312 disposed in alower position.

With reference to FIGS. 24 to 26 , description will be given to anexample of the operation for the substrate processing device 1B toperform the processing for the lower surface of the substrate 9 and theprocessing for cleaning the side surface of the spin base 21 and theinner member 312. Moreover, description will also appropriately be givento a positional relationship among the shielding plate 90, the spin base21, the inner member 312 and the outer member 313 or the like. Ifnecessary, reference will also appropriately be made to the otherdrawings. Here, description will be given to the case in which thenozzle 50 discharges the processing solution to the lower surface of thesubstrate 9. For example, the processing solution may be supplied fromthe nozzle provided in the central part of the shielding plate 90 to theupper surface of the substrate 9, thereby processing the upper surfaceof the substrate 9.

Prior to the start of the operation shown in FIG. 24 , the substrate 9is delivered onto the spin base 21 and is thus held by a chuck pin 25.Moreover, the shielding plate 90 is disposed in a processing positionand the inner member 312 and the outer member 313 are disposed inrespective lower positions. The rotation of the spin base 21 is stoppedand the nozzle 50 and the rinse liquid discharging ports 86 and 87 donot discharge the processing solution and the rinse liquid.

The substrate processing device 1B moves the inner member 312 and theouter member 313 to the respective upper positions from the state inwhich the inner member 312 and the outer member 313 are disposed in therespective lower positions (step S110). Specifically, the controller 130controls a guard driving mechanism 32 to move the inner member 312 andthe outer member 313 to the respective upper positions and to disposethem in the upper positions. Then, a cover gas nozzle 41 (FIG. 23 ) of asurface protecting portion 4 preferably starts to discharge a gas (acover gas) toward the vicinity of a center of the upper surface of thesubstrate 9 held by the spin base 21.

When the processing of step S110 is completed, the substrate processingdevice 1B starts the rotation of the spin base 21 (step S120).Specifically, the controller 130 controls the rotational drive 23 tostart the rotation of the rotating shaft portion 22. Consequently, thespin base 21 starts the rotation together with the rotating shaftportion 22. The number of rotations of the spin base 21, that is, thesubstrate 9 is set to be 1000 to 1500 rpm, for example.

Next, the substrate processing device 1B performs the processing for thelower surface of the substrate 9 with the processing solution (stepS130). Specifically, the controller 130 selectively opens the switchingvalves 833 a to 833 d to cause the processing solution supplying portion83 to start the supply of a processing solution (SC-1, DHF, SC-2 or arinse liquid), for example. The processing solution is supplied to thenozzle 50 through a pipe 832 a or the like and the nozzle 50 starts todischarge the processing solution toward a to-be-processed surface ofthe substrate 9 (in a shown example, the lower surface). The processingsolution is supplied for 7 to 10 seconds at a flow rate of 600ml/minute, for example. Then, the controller 130 closes the switchingvalves 833 a to 833 d, thereby causing the processing solution supplyingportion 83 to stop the supply of the processing solution. Consequently,the nozzle 50 stops the discharge of the processing solution toward thelower surface of the substrate 9.

When the processing solution supplying portion 83 is caused to stop thesupply of the processing solution, the substrate processing device 1Bmoves the inner member 312 to the lower position and thus disposes theinner member 312 in the lower position (step S140). Specifically, thecontroller 130 causes the guard driving mechanism 32 to move the innermember 312 from the upper position to the lower position and to stop theinner member 312 in the lower position.

When the inner member 312 is disposed in the lower position, an upperend of the inner member 312 is positioned on a side of the lower surfaceof the flange portion 29. More specifically, a lower surface of theupper end of the inner member 312 is disposed within a range of 25 mmbelow to 25 mm above with respect to the lower surface in a tip sidepart of the flange portion 29, for example. Preferably, the lowersurface of the upper end of the inner member 312 and the lower surfaceof the tip side part of the flange portion 29 are disposed on the samelevel as shown in FIG. 26 . When the inner member 312 is disposed in thelower position so that the upper end of the inner member 312 ispositioned on the side of the lower surface of the flange portion 29,the inner member 312 can receive the rinse liquid discharged to theoutside of the spin base 21 along the lower surface of the flangeportion 29 by an inner peripheral surface of an upper end part thereof.

An interval D5 in a horizontal direction between the upper ends of theinner member 312 and the outer member 313 and the outer peripheralsurface of the shielding plate 90 is set to be 1 mm to 5 mm, forexample. The interval D5 is constant regardless of the up-down movementof the inner member 312 and the outer member 313. Moreover, an intervalD6 in the horizontal direction between the upper ends of the innermember 312 and the outer member 313 and a tip of a draining portion 27is set to be 5 mm to 10 mm, for example. An interval D7 in thehorizontal direction between the upper ends of the inner member 312 andthe outer member 313 and a tip surface of the flange portion 29 is setto be 15 mm to 25 mm, for example. Moreover, an interval D8 in ahorizontal direction between the upper ends of the inner member 312 andthe outer member 313 and a side surface of the base 28 is set to be 40mm, for example. Thicknesses of the upper ends of the inner member 312and the outer member 313 are approximately 5 mm, for example. The lowersurface of the draining portion 27 and a lower end face of an extendedportion 92 of the shielding plate 90 are set onto substantially the samelevel, and an interval D9 in a perpendicular direction between thesesurfaces and the lower surface of the upper end of the inner member 312is set to be 10 mm, for example.

The substrate processing device 1B performs the processing for cleaningthe side surface of the spin base 21 and the inner peripheral surface ofthe inner member 312 while carrying out the processing for the lowersurface of the substrate 9 with the processing solution in the state inwhich the inner member 312 is disposed in the lower position (stepS150). In other words, the controller 130 causes the rinse liquiddischarging ports 86 and 87 to discharge the rinse liquid toward thelower surface of the flange portion 29 of the spin base 21 which holdsthe substrate 9 and is being rotated in a state in which the guarddriving mechanism 32 is caused to dispose the inner member 312 in thelower position. Specifically, the controller 130 opens the switchingvalve 353 d to supply the rinse liquid from the rinse liquid supplysource 851 d to each of the rinse liquid discharging ports 86 and 87 for7 to 10 seconds at a flow rate of 600 ml/minute, for example. The rinseliquid is supplied to each of the rinse liquid discharging ports 86 and87 through the pipe 852 d so that each of the rinse liquid dischargingports 86 and 87 discharges the rinse liquid upward in a perpendiculardirection.

Note that prior to the start of the supply of the rinse liquid to eachof the rinse liquid discharging ports 86 and 87, the controller 130preferably controls the rotational drive 23 to increase the number ofrotations of the spin base 21. Specifically, the number of rotations isset to be approximately 2000 rpm to 2500 rpm, for example. Consequently,the rinse liquid discharged to the lower surface of the flange portion29 reaches the inner member 312 more easily.

Moreover, the controller 130 controls the processing solution supplyingportion 83 to cause the nozzle 50 to discharge the processing solutiontoward the lower surface of the substrate 9 in the same manner as theprocessing of step S130 while the rinse liquid is discharged upward inthe perpendicular direction from each of the rinse liquid dischargingports 86 and 87 in step S150. The processing solution discharged in stepS150 may be the same as or different from the processing solutiondischarged in step S130.

As shown in FIG. 26 , the rinse liquid discharged toward a curvedsurface 211 of the flange portion 29 flows along the side surface of thebase 28 and cleans the side surface. An advancing direction of the rinseliquid reaching the curved surface 211 is changed outward in the radialdirection of the spin base 21 by the curved surface 211. The rinseliquid is splashed from the tip of the flange portion 29 toward theupper end side of the inner member 312 by centrifugal force generated bythe rotation of the spin base 21. In the case in which the inner member312 is disposed in the lower position and the upper end thereof isdisposed on the side of the lower surface of the tip side part in theflange portion 29, the rinse liquid splashed from the tip of the flangeportion 29 is scattered to the inner peripheral surface of the innermember 312 including the lower surface of the upper end side part of theinner member 312 to clean the inner peripheral surface as shown in FIG.26 .

Moreover, the processing solution supplied to the lower surface of thesubstrate 9 by the nozzle 50 is discharged from the clearance G1 (FIG. 7) between the tip part (the lower end) of the extended portion 92 of theshielding plate 90 and the tip part of the draining portion 27 of thespin base 21 to the outside of the spin base 21. The draining portion 27is positioned above the flange portion 29, and furthermore, is protrudedoutward in the radial direction of the spin base 21 from the flangeportion 29. Accordingly, the processing solution discharged from theupper surface of the draining portion 27 and the rinse liquid dischargedfrom the lower surface of the flange portion 29 are discharged from thespin base 21 in a state in which they are separated from each other. Theprocessing solution and the rinse liquid which are discharged arescattered outward in the radial direction of the spin base 21 whilespreading in a vertical direction in a state in which they are separatedfrom each other by the upper end side part of the inner member 312. Theprocessing solution is received by the outer member 313 disposed in theupper position of the upper surface of the upper end part in the outermember 313. The rinse liquid is received by the inner peripheral surfaceof the outer member 313 including the inner peripheral surface of theupper end side part of the inner member 312 and cleans the innerperipheral surface.

When the processing in step S150 is ended, the controller 130 causes theprocessing solution supplying portion 83 and the rinse liquid supplyingportion 85 to stop the supply of the processing solution and the rinseliquid, thereby stopping the movement of the inner member 312 and theouter member 313 to the lower positions, the rotation of the spin base21, or the like.

As described above, the upper surface of the outer peripheral edge partof the draining portion 27 is the curved surface which is convexlycurved obliquely upward and outward, and the thickness is graduallyreduced closer to the outer peripheral edge part (the tip part) and theouter peripheral edge of the draining portion 27. Accordingly, theprocessing solution discharged from the clearance G1 is prevented fromgoing round the flange portion 29 side along the lower surface of thedraining portion 27. Therefore, the processing solution is preventedfrom being scattered toward the inner peripheral surface of the innermember 312 in mixture with the rinse liquid discharged from the flangeportion 29.

For example, a tip surface of a draining portion 27B (FIG. 13 ) whichwill be described below is a perpendicular surface, and the drainingportion 27B is also positioned above the flange portion 29, andfurthermore, is protruded outward in the radial direction of the spinbase 21 from the flange portion 29. Accordingly, the processing solutiondischarged from the upper surface of the draining portion 27B and therinse liquid discharged from the lower surface of the flange portion 29are discharged from the spin base 21 in a state in which they areseparated from each other. Even if the draining portion 27B is employed,thus, the usefulness of the present invention is not damaged.

For example, in the case in which the draining portion 27 (27B) is notprovided, a part of the processing solution emitted to the substrate 9and discharged from the spin base 21 via the substrate 9 goes round thelower surface side of the flange portion 29. In this case, theprocessing solution going round is emitted from below toward the lowersurface of the flange portion and is discharged from the spin base 21 inmixture with the rinse liquid discharged along the lower surface. If thesame rinse liquid as the rinse liquid supplied by the rinse liquidsupplying portion 85 is employed as the processing solution to besupplied to the substrate 9, however, it is possible to simultaneouslyclean the substrate 9 and to clean the inner peripheral surface of theinner member 312 with the rinse liquid without causing a problem of themixture. Even if the draining portion 27 (27B) is not provided,accordingly, the usefulness of the present invention is not damaged.

Moreover, if the processing solution is not discharged from the nozzle50 but the rinse liquid is discharged from the rinse liquid dischargingports 86 and 87 in step S150, for example, the processing solutionsticking to the substrate 9 and remaining can be removed by the highspeed rotation of the substrate 9, thereby drying the substrate 9 instep S130. In this case, the processing solution in a large amount isnot discharged from the spin base 21 via the substrate 9 in step S150.Also in the case in which the outer member 313 is not provided,accordingly, it is possible to clean the side surface of the spin base21 and to clean the inner peripheral surface of the inner member 312 bythe rinse liquid discharging ports 86 and 87 in step S150. Even if theouter member 313 is not provided, therefore, the usefulness of thepresent invention is not damaged.

In addition, the curved surface 211 is not formed on the lower surfaceof the base end part of the flange portion 29 and the lower surface ofthe flange portion 29 and the side surface of the base 28 may besubstantially orthogonal to each other, for example. Also in this case,the rinse liquid discharged to the lower surface of the flange portion29 is discharged from the tip of the flange portion 29 toward the innerperipheral surface of the inner member 312 by the centrifugal forcegenerated by the rotation of the spin base 21.

Also in the case in which each rinse liquid discharging port 87 does notdischarge the rinse liquid toward the peripheral edge part of the lowersurface of the spin base 21, moreover, it is possible to clean the sidesurface of the spin base 21 and to clean the inner peripheral surface ofthe inner member 312 if each rinse liquid discharging port 86 dischargesthe rinse liquid toward the lower surface of the flange portion 29. Evenif each rinse liquid discharging port 87 is not provided, accordingly,the usefulness of the present invention is not damaged.

Furthermore, only the spin base 21 in the spin base 21, the rinse liquiddischarging ports 86 and 87 and the inner member 312 is rotated aroundthe rotation axis a1. For this reason, it is preferable that a largenumber of rinse liquid discharging ports 86 be distributed and disposedin the circumferential direction of the spin base 21 because the innerperipheral surface of the inner member 312 can be cleaned moreuniformly. Even if only one rinse liquid discharging port 86 isprovided, however, the side surface of the spin base 21 and the innerperipheral surface of the inner member 312 can be cleanedsimultaneously. Therefore, the usefulness of the present invention isnot damaged.

By any of the substrate processing method according to the thirdpreferred embodiment described above and the substrate processing deviceaccording to the third preferred embodiment having the structuredescribed above, the processing solution discharging portion 83Adischarges the processing solution toward the to-be-processed surface ofthe substrate 9 in a state in which the inner member 312 is disposed inthe upper position where the processing solution discharged from thesubstrate 9 can be received. In the state in which the inner member 312is disposed in the lower position where the upper end of the innermember 312 is placed on the side of the flange portion 29 of the spinbase 21, then, the rinse liquid discharging portion 85A discharges therinse liquid toward the flange portion 29 of the spin base 21 whichholds the substrate 9 and is being rotated. The discharged rinse liquidis discharged outward in the radial direction of the spin base 21 fromthe lower surface of the flange portion 29. The upper end of the innermember 312 disposed in the lower position is positioned on the side ofthe flange portion 29. Therefore, the discharged processing solutionhits the inner peripheral surface of the upper end part of the innermember 312. In the state in which the substrate 9 is held by the spinbase 21, consequently, both the inner member 312 and the spin base 21which have the processing solution sticking thereto can be cleaned bythe common rinse liquid discharging portion 85A.

By any of the substrate processing method according to the thirdpreferred embodiment described above and the substrate processing deviceaccording to the third preferred embodiment having the structuredescribed above, moreover, the draining portion 27 is positioned abovethe flange portion 29 and is protruded outward in the radial directionof the spin base 21 from the flange portion 29. The rinse liquiddischarged to the flange portion 29 from below is moved to the tip ofthe flange portion 29 along the lower surface of the flange portion 29and is discharged outward in the radial direction of the spin base 21from the tip. The processing solution emitted to the to-be-processedsurface of the substrate 9 and discharged from the substrate 9 isdischarged outward in the radial direction from the rinse liquid via theupper surface of the draining portion 27 and outward in the radialdirection of the spin base 21 from above. Accordingly, the processingsolution and the rinse liquid are discharged from the spin base 21 inthe state in which they are separated from each other. Therefore, it ispossible to prevent the discharged processing solution and rinse liquidfrom being mixed with each other.

By any of the substrate processing method according to the thirdpreferred embodiment described above and the substrate processing deviceaccording to the third preferred embodiment having the structuredescribed above, furthermore, the rinse liquid discharging portion 85Adischarges the rinse liquid toward the curved surface 211 of the flangeportion 29 from below. The curved surface 211 smoothly connects to theouter peripheral surface of the base 28 of the spin base 21 and thelower surface of the flange portion 29, respectively. By decreasing therinse liquid discharged to the curved surface 211 and then splashed backdownward, accordingly, it is possible to discharge the rinse liquid in alarger amount along the lower surface of the flange portion 29.Consequently, the inner peripheral surface of the inner member 312 canbe cleaned more efficiently.

By any of the substrate processing method according to the thirdpreferred embodiment described above and the substrate processing deviceaccording to the third preferred embodiment having the structuredescribed above, moreover, the inner member 312 is disposed in the lowerposition, and furthermore, the outer member 313 is disposed in theposition where the processing solution supplied from the processingsolution discharging portion 83A to the substrate 9 and then dischargedfrom the substrate 9 can be received. In this state, the processingsolution is discharged toward the to-be-processed surface of thesubstrate 9 and the rinse liquid is discharged toward the lower surfaceof the flange portion 29. Accordingly, it is possible to simultaneouslyperform the processing for the substrate 9 and the processing forcleaning the spin base 21 and the inner member 312.

By any of the substrate processing method according to the thirdpreferred embodiment described above and the substrate processing deviceaccording to the third preferred embodiment having the structuredescribed above, furthermore, the spin base 21 and the inner member 312can be cleaned in the state in which a sealing property of shieldingplate 90 to seal the substrate 9 is enhanced. Therefore, the uppersurface of the substrate 9 can further be protected.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of theinvention.

What is claimed is:
 1. A substrate processing device comprising: aholding member having an upper surface opposed to a lower surface of asubstrate with a clearance to hold said substrate horizontally frombelow, being rotatable around a predetermined rotation axis, andincluding a disk-shaped base defining a central axis coincident withsaid rotation axis and a flange portion protruding outward from aperipheral wall portion of said base in a radial direction; a rotationaldrive rotating said holding member around said rotation axis; a guardhaving a cylindrical shape including an upper end side part that extendsobliquely upward toward said rotation axis to surround a periphery ofsaid holding member, being movable upward and downward; a processingsolution discharging portion capable of discharging a processingsolution to a to-be-processed surface of said substrate; a cleaningliquid discharging portion capable of discharging a cleaning liquid tosaid flange portion from below said flange portion of said holdingmember; an elevation drive capable of moving said guard upward anddownward between an upper position where said guard can receive saidprocessing solution supplied from said processing solution dischargingportion to said substrate and then discharged from said substrate and alower position where an upper end of said guard is placed on a side ofsaid flange portion; and a controller controlling said elevation drive,said processing solution discharging portion and said cleaning liquiddischarging portion, wherein while making said elevation drive disposesaid guard in said lower position, said controller makes said cleaningliquid discharging portion discharge said cleaning liquid toward saidflange portion of said holding member which holds said substrate whilerotating.
 2. The substrate processing device according to claim 1,wherein said holding member further includes, on an upper side of saidflange portion, an upper flange portion protruding more outward thansaid flange portion in a radial direction of said holding member from anupper end of said peripheral wall portion of said base.
 3. The substrateprocessing device according to claim 1, wherein said holding memberincludes, in a base end part of said flange portion, a curved surfaceportion which has a sectional shape of a circular arc and smoothlyconnects to an outer peripheral surface of said base of said holdingmember and a lower surface of said flange portion, and said cleaningliquid discharging portion discharges said cleaning liquid toward saidcurved surface portion of said flange portion from below.
 4. Thesubstrate processing device according to claim 1 further comprising: acylindrical outside guard provided outside said guard, surrounding saidperiphery of said holding member and capable of being moved upward anddownward, wherein said elevation drive can also move said outside guardupward and downward, and while making said elevation drive dispose saidguard in said lower position and dispose said outside guard in aposition where said outside guard can receive said processing solutionsupplied from said processing solution discharging portion to saidsubstrate and then discharged from said substrate, said controller makessaid processing solution discharging portion discharge said processingsolution toward said to-be-processed surface of said substrate and makessaid cleaning liquid discharging portion discharge said cleaning liquidtoward a lower surface of said flange portion.
 5. The substrateprocessing device according to claim 1 further comprising: an opposedmember being rotated around said rotation axis, wherein said opposedmember includes a body portion opposed, with a clearance, to an uppersurface of said substrate held by said holding member and a cylindricalextended portion extending from a peripheral edge part of said bodyportion toward said holding member side to surround an end face of saidsubstrate.
 6. A substrate processing method comprising: a holding stepof holding a substrate with a substrate holding portion having a flangeportion; a rotation step of rotating said substrate; a supplying step ofsupplying a processing solution to said substrate; a receiving step ofreceiving said processing solution with a guard; and a cleaning step ofcleaning said processing solution adhered to said guard by supplying acleaning liquid to said flange portion from below said flange portion;wherein in said supplying step, said processing solution is dischargedtoward said substrate while said guard is disposed in an upper positionwhere said guard can receive said processing solution discharged fromsaid substrate, and in said cleaning step, said cleaning liquid isdischarged toward said flange portion of said substrate holding portionwhich holds said substrate while rotating while said guard is disposedin a lower position where an upper end of said guard is placed on a sideof said flange portion; further comprising: a step of making a bodyportion of an opposed member having said body portion and a cylindricalextended portion be opposed, with a clearance, to an upper surface ofsaid substrate held by said substrate holding portion; and a step ofrotating said opposed member around said rotation axis.